Impact of Sb Composition on Strain Profile of GaAs1-xSbx Capped InAs Quantum Dots

被引：10
|
作者：
Krishna, Jhuma Saha [1 ]
Panda, Debiprasad [2 ]
Chakrabarti, Subhananda [2 ]
机构：
[1] Indian Inst Technol, Dept Ctr Res Nanotechnol & Sci, Mumbai 400076, Maharashtra, India
[2] Indian Inst Technol, Dept Elect Engn, Mumbai 400076, Maharashtra, India
来源：
IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2019年 / 18卷
关键词：
Biaxial; hydrostatic; probability density; quantum dots; strain; ELECTRONIC-STRUCTURE; LIGHT-EMISSION; GAASSB; LAYER; PHOTOLUMINESCENCE; WAVELENGTH;
D O I：
10.1109/TNANO.2019.2897709
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A detail theoretical investigation on strain distribution of InAs quantum dot (QD) capped with GaAs1-xSbx has been carried out. The transition from type-I to type-II with varying Sb composition has been observed and demonstrated in terms of energy band profile and electron-hole probability density function. The effect of Sb composition on hydrostatic and biaxial strain and its outcome on optical properties has been analyzed in this study. The overall strain distribution was found to be minimum in QD heterostructures with Sb > 14%, which would improve carrier confinement and result in longer wavelength emission. The study of strain profile inside QD heterostructures would facilitate the researchers toward optimized designing of strain-coupled QD based devices, which could be utilized in infrared photodetector and quantum communication applications.
引用
收藏
页码：234 / 239
页数：6
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