Tailoring of the Wave Function Overlaps InAs/GaAs1-xSbx Type-II Quantum Dots

被引：4
|
作者：
Hsu, Wei-Ting [1 ]
Liao, Yu-An [1 ]
Lu, Shu-Kai [1 ]
Cheng, Shun-Jen [1 ]
Chiu, Pei-Chin [2 ]
Chyi, Jen-Inn [2 ]
Chang, Wen-Hao [1 ]
机构：
[1] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 300, Taiwan
[2] Natl Cent Univ, Dept Elect Engn, Chungli 320, Taiwan
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2010年 / 42卷 / 10期
关键词：
Quantum dots; Type-II; Time-resolved photoluminescence; 1.3; MU-M; LUMINESCENCE; EXCITONS;
D O I：
10.1016/j.physe.2009.12.033
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Effects of thermal annealing on the emission properties of type-II InAs quantum dots (QDs) covered by a thin GaAs1-xSbx layer are investigated by photoluminescence (PL) and time-resolved PL measurements. Apart from large blueshifts and a pronounced narrowing of the QD emission peak, the annealing induced alloy intermixing also leads to enhanced radiative recombination rates and reduced localized states in the GaAs1-xSbx layer. We find that the type-II QD structure can sustain thermal annealing up, to 850 degrees C. In particular, we find that it is possible to manipulate between type-I and type-II recombinations in annealed QDs by using different excitation powers. We demonstrate that postgrowth thermal annealing can be used to tailor the band alignment, the wave function overlaps, and hence the recombination dynamics in the InAs/GaAs1-xSbx type-II QDs. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码：2524 / 2528
页数：5
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