Investigation of InAs/GaAs1-xSbx quantum dots for applications in intermediate band solar cells

被引：22
|
作者：
Cheng, Y. [1 ]
Fukuda, M. [1 ]
Whiteside, V. R. [1 ]
Debnath, M. C. [1 ]
Vallely, P. J. [1 ]
Mishima, T. D. [1 ]
Santos, M. B. [1 ]
Hossain, K. [2 ]
Hatch, S. [3 ]
Liu, H. Y. [3 ]
Sellers, I. R. [1 ]
机构：
[1] Univ Oklahoma, Homer L Dodge Dept Phys & Astron, 440 W Brooks St, Norman, OK 73019 USA
[2] Amethyst Res Inc, 123 Case Circle, Ardmore, OK 73401 USA
[3] UCL, Dept Elect & Elect Engn, Torrington Pl, London WC1E 7JE, England
来源：
SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2016年 / 147卷
基金：
英国工程与自然科学研究理事会;
关键词：
Type-II quantum dots; Intermediate band solar cell; Defect mediated tunneling; TRANSITIONS; EFFICIENCY; GROWTH;
D O I：
10.1016/j.solmat.2015.11.046
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Self-assembled InAs quantum dots (QD) in a GaAs1-xSbx matrix are studied using photoluminescence. Increasing the Sb composition in the GaAs1-xSbx matrix reduces the effective band gap while lowering the valence band offset, resulting in transition from a type-I to type-II band alignment for Sb compositions above 14%. The optimized quantum dots are incorporated in an InAs/GaAs1-xSbx based p-i-n solar cell with a degenerate valence band and therefore optimum intermediate band structure. Temperature dependent external quantum efficiency measurements show an enhancement in the QDs region with increasing temperature. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码：94 / 100
页数：7
相关论文
共 50 条
  • [1] Investigation of InAs/GaAs1-xSbx quantum dots for applications in intermediate band solar cells
    Cheng, Y.
    Fukuda, M.
    Whiteside, V. R.
    Debnath, M. C.
    Vallely, P. J.
    Meleco, A. J.
    Roeth, A. J.
    Mishima, T. D.
    Santos, M. B.
    Hossain, K.
    Hatch, S.
    Liu, H. Y.
    Sellers, I. R.
    [J]. 2016 IEEE 43RD PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 2016, : 5 - 8
  • [2] Electronic properties of type-II GaAs1-xSbx/GaAs quantum rings for applications in intermediate band solar cells
    Arkani, Reza
    Broderick, Christopher A.
    O'Reilly, Eoin P.
    [J]. OPTICAL AND QUANTUM ELECTRONICS, 2020, 52 (11)
  • [3] InAs quantum dots on GaAs for intermediate band solar cells
    Micha, Daniel N.
    Weiner, Eleonora
    Jakomin, Roberto
    Kawabata, Rudy
    Mourao, Renato
    Pires, Mauricio P.
    Souza, Patricia L.
    [J]. 2015 30TH SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO), 2015,
  • [4] Band alignment and carrier recombination of InAs/GaAs1-xSbx quantum dots affected by Sb content
    Ji Lian
    Ye Sai
    Lu ShuLong
    [J]. SCIENTIA SINICA-PHYSICA MECHANICA & ASTRONOMICA, 2018, 48 (10)
  • [5] Carrier dynamics of InAs quantum dots with GaAs1-xSbx barrier layers
    Guo, Yingnan
    Liu, Yao
    Liang, Baolai
    Wang, Ying
    Guo, Qinglin
    Wang, Shufang
    Fu, Guangsheng
    Mazur, Yuriy I.
    Ware, Morgan E.
    Salamo, Gregory J.
    [J]. APPLIED PHYSICS LETTERS, 2017, 111 (19)
  • [6] Intermediate-Band Solar Cells Based on InAs/GaAs Quantum Dots
    Yang Xiao-Guang
    Yang Tao
    Wang Ke-Fan
    Gu Yong-Xian
    Ji Hai-Ming
    Xu Peng-Fei
    Ni Hai-Qiao
    Niu Zhi-Chuan
    Wang Xiao-Dong
    Chen Yan-Ling
    Wang Zhan-Guo
    [J]. CHINESE PHYSICS LETTERS, 2011, 28 (03)
  • [7] High-density InAs/GaAs1-xSbx quantum-dot structures grown by molecular beam epitaxy for use in intermediate band solar cells
    Debnath, M. C.
    Mishima, T. D.
    Santos, M. B.
    Cheng, Y.
    Whiteside, V. R.
    Sellers, I. R.
    Hossain, K.
    Laghumavarapu, R. B.
    Liang, B. L.
    Huffaker, D. L.
    [J]. JOURNAL OF APPLIED PHYSICS, 2016, 119 (11)
  • [8] MBE Growth and Characterization of InAs Quantum Dots on Strained GaAs1-xSbx Buffer Layer For Application in High Efficiency Solar Cells
    Ban, K. -Y.
    Liu, G. M.
    Bremner, S. P.
    Opila, R.
    Honsberg, C. B.
    [J]. PVSC: 2008 33RD IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-4, 2008, : 167 - +
  • [9] Impact of Sb Composition on Strain Profile of GaAs1-xSbx Capped InAs Quantum Dots
    Krishna, Jhuma Saha
    Panda, Debiprasad
    Chakrabarti, Subhananda
    [J]. IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2019, 18 : 234 - 239
  • [10] Investigation of single-layer/multilayer self-assembled InAs quantum dots on GaAs1-xSbx/GaAs composite substrates
    Tang, Dinghao
    Kim, Yeongho
    Faleev, Nikolai
    Honsberg, Christiana B.
    Smith, David J.
    [J]. JOURNAL OF APPLIED PHYSICS, 2015, 118 (09)
12345