InAs quantum dots on GaAs for intermediate band solar cells

被引：0
|
作者：
Micha, Daniel N. [1 ,2 ]
Weiner, Eleonora [1 ,3 ]
Jakomin, Roberto [1 ,4 ]
Kawabata, Rudy [1 ,3 ]
Mourao, Renato [1 ,5 ]
Pires, Mauricio P. [1 ,5 ]
Souza, Patricia L. [1 ,3 ]
机构：
[1] Inst Nacl Ciencia & Tecnol Nanodisposit Semicond, DISSE, Sao Paulo, Brazil
[2] CEFET, Coordenacao Licenciatura Fis, UnED Petropolis, Rio De Janeiro, RJ, Brazil
[3] Pontificia Univ Catolica Rio de Janeiro, Semicond Lab, BR-22453 Rio De Janeiro, Brazil
[4] UFRJ, Campus Xerem, Duque De Caxias, RJ, Brazil
[5] Univ Fed Rio de Janeiro, Inst Fis, Rio de Janeiro, RJ, Brazil
来源：
2015 30TH SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO) | 2015年
关键词：
intermediate ban solar cellt; quantum dots; photovoltaics;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Quantum dot intermediate band solar cells (QD-IBSC) have been produced in order to pave the road to high efficiency solar cells, demonstrating sub-bandgap absorption. Even though the obtained figures of merit are still lower than those of the samples without the quantum dots, optical activity of the nanostructures has been demonstrated. While the photovoltaic activity of the QD-IBSC is observed for wavelengths until 1000 nm, it vanishes at around 900 nm for the reference sample. We conclude that improvement in the QD morphological structure is still needed to minimize surface recombination and that more layers and a higher QD density is mandatory to increase the overall sub-bandgap absorption. Finally, a potential change in the solar cell growth conditions is suggested.
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页数：3
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