Fabrication & testing of integrated ferroelectric capacitors

被引：0

作者：

Yao, HP ^{[1
]}

Zhong, Q ^{[1
]}

Jiang, GB ^{[1
]}

Huang, WN ^{[1
]}

Hong, XJ ^{[1
]}

Tang, TG ^{[1
]}

机构：

[1] Fudan Univ, Dept Elect Engn, Shanghai 200433, Peoples R China

来源：

1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS | 1998年

关键词：

D O I：

10.1109/ICSICT.1998.785791

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ferroelectric thin film can be used to fabricate non-volatile memories (FRAM). FRAM based on ferroelectric polarization has much more excellent performance than (EPROM)-P-2. The key technology of making FRAM is to form integrated ferroelectric thin film capacitors of good quality. One practical approach of forming integrated ferroelectric capacitor on CMOS circuit is described.

引用

页码：63 / 66

页数：4

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