Fabrication and properties of one-mask-patterned ferroelectric integrated capacitors

被引:0
|
作者
Torii, K
Shoji, K
Kawakami, H
Kumihashi, T
Itoga, T
Yokoyama, N
Moniwa, M
Kaga, T
Fujisaki, Y
机构
[1] Hitachi, Ltd, Tokyo
关键词
ferroelectric capacitor; integrated capacitor; one-mask patterning; feature size of 0.5 mu m;
D O I
10.1002/(SICI)1520-6416(199710)121:1<43::AID-EEJ6>3.0.CO;2-#
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A one-mask-patterned ferroelectric capacitor test structure designed with a 0.5-mu m feature size was fabricated. Oxygen plasma treatment after dry etching decreased the leakage current to as low as that of as-deposited film. These one-mask-patterned ferroelectric capacitors, with switching charge almost equal to as-deposited film, were successfully fabricated. Ferroelectric memories as dense as dynamic random access memories will become possible with this technology. However, the leakage current density for micron-sized capacitors is 2 to 10 times that of large capacitors. The leakage current in small capacitors is increased due to perimeter leakage that runs through the damaged region on the capacitor sidewall. (C) Scripta Technica, Inc.
引用
收藏
页码:43 / 50
页数:8
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