Fabrication and characterization of ferroelectric PLZT film capacitors on metallic substrates

We have grown ferroelectric Pb(0.92)La(0.08)Zr(0.52)Ti(0.48)O(3) (PLZT) films on Hastelloy C276 (HC) substrates by chemical solution deposition. Samples of 1.15-mu m-thick PLZT films were prepared on HC with and without lanthanum nickel oxide (LNO) films as an intermediate buffer layer. On samples with and without LNO buffers at room temperature, we measured dielectric constants of a parts per thousand 1,300 and a parts per thousand 450 and loss tangents of a parts per thousand 0.06 and a parts per thousand 0.07, respectively. For PLZT films grown on HC with LNO buffer, the dielectric constant increases, while the dielectric loss decreases, with increasing temperature. A dielectric constant of a parts per thousand 2,000 and loss of a parts per thousand 0.05 were observed at 150 A degrees C. Samples with LNO buffer also exhibited slimmer hysteresis loops and lower leakage current density when compared to samples without LNO buffer. The following results were measured on samples with and without LNO buffers: remanent polarization (P (r)) values of 21.3 and 36.4 mu C/cm(2), coercive electric field (E (c)) values of 41 and 173 kV/cm, and leakage current densities of a parts per thousand 1.1 x 10(-8) and a parts per thousand 1.6 x 10(-7) A/cm(2), respectively. The energy storage capability was measured at a parts per thousand 65 J/cm(3) for the PLZT film-on-foil capacitor deposited on HC with LNO buffer.