PLZT: Precursor characterization and ferroelectric properties

被引：0
|
作者：
Fe, L
Wouters, DJ
Norga, G
Maes, HE
Gnappi, G
Montenero, A
机构：
[1] IMEC, Louvain, Belgium
[2] Limburgs Univ Ctr, Lab Inorgan & Phys Chem, Diepenbeek, Belgium
[3] Univ Parma, I-43100 Parma, Italy
来源：
INTEGRATED FERROELECTRICS | 1998年 / 22卷 / 1-4期
关键词：
sol-gel; PZT precursor; lanthanum doping; composition;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
PZT and PLZT precursor solutions were prepared by a sol-gel route, varying the Zr/Ti ratio and the La doping level. They were characterized by TGA coupled with FT-IR. Reactions taking place during heat treatments are discussed. Composition of PZT and PLZT thin films was measured by RES and their orientation determined by XRD. Ferroelectric capacitors with Pt electrodes were characterized by hysteresis and fatigue measurements.
引用
收藏
页码：555 / 563
页数：9
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