MOCVD of ferroelectric PLZT thin films and their properties

被引：14
|
作者：
Shimizu, M
Fujisawa, H
Shiosaki, T
机构：
[1] Department of Electronics, Faculty of Engineering, Himeji Institute of Technology, Himeji, Hyogo, 671-22
[2] Department of Electronics Science and Engineering, Faculty of Engineering, Kyoto University, Sakyo-ku, Kyoto, 606, Yoshida Honmachi
来源：
MICROELECTRONIC ENGINEERING | 1995年 / 29卷 / 1-4期
关键词：
D O I：
10.1016/0167-9317(95)00138-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
MOCVD of PLZT thin films was performed. Highly oriented PLZT thin films were obtained at a substrate temperature of 620 degrees C. The effects of the La content on the electrical properties of the PLZT thin films were investigated. The remanent polarization and coercive field of the PLZT films decreased with an increase in the La content. A decrease in the leakage current densities caused by La doping was observed. With respect to the current-time characteristics, the PLZT films did not show a steady state condition up to 10(3) seconds. The possibility of using La(i-C3H7C5H4)(4) as a new La precursor was also discussed.
引用
收藏
页码：173 / 176
页数：4
相关论文
共 50 条
  • [1] The ferroelectric and electrical properties of PLZT thin films
    Lee, In-Seok
    Yoon, Ji-Eon
    Hwang, Dong-Hyun
    Kim, Sang-Jih
    Ahn, Jung-Hoon
    Son, Young-Guk
    [J]. JOURNAL OF CERAMIC PROCESSING RESEARCH, 2009, 10 (04): : 541 - 543
  • [2] PREPARATION AND PROPERTIES OF THIN FERROELECTRIC-FILMS OF PLZT
    VOLZ, H
    KOGER, K
    SCHMITT, H
    [J]. FERROELECTRICS, 1983, 51 (1-2) : 87 - 92
  • [3] Study on the physical properties of PLZT ferroelectric thin films
    Chen, Lan
    Li, Huiqiu
    Zhang, Yueli
    Mo, Dang
    [J]. Gongneng Cailiao/Journal of Functional Materials, 2000, 31 (03): : 287 - 289
  • [4] PREPARATION, PROPERTIES AND APPLICATION OF THIN FERROELECTRIC-FILMS OF PLZT
    VOLZ, H
    KOGER, K
    SCHMITT, H
    [J]. FERROELECTRICS, 1984, 56 (1-2) : 161 - 164
  • [5] MOCVD of ferroelectric thin films
    Schmidt, C
    Burte, EP
    [J]. MICROELECTRONICS RELIABILITY, 1999, 39 (02) : 257 - 260
  • [6] MOCVD of ferroelectric thin films
    Rice, CE
    Sun, S
    Cuchiaro, JD
    Provost, LG
    Tompa, GS
    [J]. FERROELECTRIC THIN FILMS XII, 2004, 784 : 163 - 168
  • [7] MOCVD of ferroelectric thin films
    Schmidt, C
    Lehnert, W
    Leistner, T
    Frey, L
    Ryssel, H
    [J]. JOURNAL DE PHYSIQUE IV, 1999, 9 (P8): : 575 - 582
  • [8] PREPARATION AND PROPERTIES OF FERROELECTRIC PLZT THIN-FILMS BY RF SPUTTERING
    ISHIDA, M
    MATSUNAMI, H
    TANAKA, T
    [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 951 - 953
  • [9] BASIC DEPOSITION PROCESS AND FERROELECTRIC PROPERTIES OF SPUTTERED PLZT THIN FILMS
    Wasa, K.
    Adachi, H.
    Kitabatake, M.
    [J]. FERROELECTRICS, 1994, 151 (01) : 1 - 10
  • [10] Phase formations and ferroelectric properties of PLT thin films by MOCVD
    Lee, SS
    Kim, HG
    [J]. INTEGRATED FERROELECTRICS, 1996, 12 (2-4) : 83 - &
12345