A Retention-Aware Multilevel Cell Phase Change Memory Program Evaluation Metric

被引：6

作者：

Khwa, Win-San ^{[1
,2
]}

Chang, Meng-Fan ^{[2
]}

Wu, Jau-Yi ^{[1
]}

Lee, Ming-Hsiu ^{[1
]}

Su, Tzu-Hsiang ^{[1
]}

Wang, Tien-Yen ^{[1
]}

Li, Hsiang-Pang ^{[1
]}

BrightSky, Matthew ^{[3
]}

Kim, SangBum ^{[3
]}

Lung, Hsiang-Lan ^{[1
]}

Lam, Chung ^{[3
]}

机构：

[1] Macronix Int Co Ltd, Hsinchu 30078, Taiwan

[2] Natl Tsing Hua Univ, Hsinchu 30013, Taiwan

[3] IBM TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2016年 / 37卷 / 11期

关键词：

Phase change memory; multiple-level cell; programming scheme; resistance drift; RELAXATION; RESISTANCE; DRIFT;

D O I：

10.1109/LED.2016.2614513

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Multilevel cell (MLC) phase change memory (PCM) offers many potential advantages in scalability, bit-alterability, non-volatility, and high program speed. While many program approaches had been proposed, they were usually evaluated in energy, delay, or energy-delay product (EDP). These metrics, however, often overlook the data integrity maintenance (DIM) overhead caused by the resistance drift (R-drift) phenomenon in the MLC PCM. This letter proposes a programmaintenance (PM) metric, which is a modified EDP metric with DIM consideration. Furthermore, we evaluated the PM metric of various pulse shapes in iterative program-verify scheme. From the measured data of a 128M-cell MLC PCM chip, we showed that the PM metric of optimized pulse shape is better than those of the conventional SET and RESET pulse shapes up to 86.7%.

引用

页码：1422 / 1425

页数：4

共 50 条

[41] Designing Multiple Crystallization in Superlattice-like Phase-Change Materials for Multilevel Phase-Change Memory
Zheng, Long
Song, Wenxiong
Song, Zhitang
Song, Sannian
ACS APPLIED MATERIALS & INTERFACES, 2019, 11 (49) : 45885 - 45891
[42] Enhancing the Data Reliability of Multilevel Storage in Phase Change Memory with 2T2R Cell Structure
Lv, Yi
Wang, Qian
Chen, Houpeng
Xie, Chenchen
Ni, Shenglan
Li, Xi
Song, Zhitang
MICROMACHINES, 2021, 12 (09)
[43] Energy-and Endurance-Aware Design of Phase Change Memory Caches
Joo, Yongsoo
Niu, Dimin
Dong, Xiangyu
Sun, Guangyu
Chang, Naehyuck
Xie, Yuan
2010 DESIGN, AUTOMATION & TEST IN EUROPE (DATE 2010), 2010, : 136 - 141
[44] Reset-induced variability of retention characteristics in phase change memory (PCM)
Rizzi, M.
Ciocchini, N.
Montefiori, A.
Ferro, M.
Lacaita, A. L.
Fantini, P.
Ielmini, D.
2014 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 2014,
[45] Scaling of Data Retention Statistics in Phase-Change Random Access Memory
Kwon, Yongwoo
Park, Byoungnam
Kang, Dae-Hwan
IEEE ELECTRON DEVICE LETTERS, 2015, 36 (05) : 454 - 456
[46] A Data Retention Model for Phase-Change Memory by the Monte Carlo Approach
Jia, Yuchao
Lin, Xinnan
Wang, Wei
Wei, Yiqun
Cuil, Xiaole
Zhang, Xing
2012 IEEE 11TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT-2012), 2012, : 785 - 787
[47] Study on GeGaSbTe film for long data retention phase change memory application
Zhang, Zhonghua
Song, Sannian
Song, Zhitang
Cheng, Yan
Gu, Yifeng
Wu, Liangcai
Liu, Bo
Feng, Songlin
JOURNAL OF NON-CRYSTALLINE SOLIDS, 2013, 381 : 54 - 57
[48] Phase-Change Random Access Memory With Multilevel Resistances Implemented Using a Dual Phase-Change Material Stack
Gyanathan, Ashvini
Yeo, Yee-Chia
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (11) : 2910 - 2916
[49] An energy characterization platform for memory devices and energy-aware data compression for multilevel-cell flash memory
Joo, Yongsoo
Cho, Youngjin
Shin, Donghwa
Park, Jaehyun
Chang, Naehyuck
ACM TRANSACTIONS ON DESIGN AUTOMATION OF ELECTRONIC SYSTEMS, 2008, 13 (03)
[50] A Novel Emulator Design for Phase Change Memory Cell
Ong, Ming Hong
El-Hassan, Nemat H.
Kumar, T. Nandha
Almurib, Haider Abbas F.
2014 2ND INTERNATIONAL CONFERENCE ON ELECTRONIC DESIGN (ICED), 2014, : 100 - 104

← 1 2 3 4 5 →