A Novel Emulator Design for Phase Change Memory Cell

被引：0
|
作者：
Ong, Ming Hong [1 ]
El-Hassan, Nemat H. [1 ]
Kumar, T. Nandha [1 ]
Almurib, Haider Abbas F. [1 ]
机构：
[1] Univ Nottingham, Fac Engn, Malaysia Campus, Kuala Lumpur, Malaysia
来源：
2014 2ND INTERNATIONAL CONFERENCE ON ELECTRONIC DESIGN (ICED) | 2014年
关键词：
Phase Change Memory (PCM); non-volatile memory; chalcogenide; emulator;
D O I：
暂无
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
This paper presents a novel LTSPICE based Phase Change Memory (PCM) cell emulator model, using only off the shelf discrete electronic components. The electrical based model simulates not only the continuous resistance change (as corresponding to amorphous and crystalline phases), but also the temperature profile across the cell during programming, while assessing the impact of the programming time. The designed emulator circuit is able to fully characterize the holding voltage and generate the standard I-V characteristic curve of a PCM cell, and possesses the operational features of an actual PCM element. The simulation results are found to be in close agreement to experimental data.
引用
收藏
页码：100 / 104
页数：5
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