Phase Change Memory cell design by thermal analysis with Finite element Simulation

被引：0
|
作者：
Gong, Yue-Feng [1 ]
Ling, Yun [1 ]
Song, Zhi-Tang [1 ]
Feng, Song-lin [1 ]
机构：
[1] Chinese Acad Sci, State Key Lab Funct Mat Informat, Lab Nanotechnol, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China
来源：
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4 | 2008年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A comprehensive thermal analysis of the Phase change random memory (PCRAM) by 3D finite element modeling is proposed. The impact of thermal on device cell design and optimization is investigated. Such an analysis can be used as a guideline for the optimum design. This manuscript provides an insight into the thermal issues and the phenomena in the PCRAM. Refined structure, ring in GST structure (RIG), is proposed for high density and low power consumption.
引用
收藏
页码：508 / 511
页数：4
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