The high frequency and power performance of SiGeHBTs with SIC structure at cryogenic temperature

被引：2
|
作者：
Hsieh, MW [1 ]
Liang, KH [1 ]
Lee, CY [1 ]
Chen, GJ [1 ]
Tang, DDL [1 ]
Chan, YJ [1 ]
机构：
[1] Natl Cent Univ, Dept Elect Engn, Jhongli 320, Taiwan
来源：
2005 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-4 | 2005年
关键词：
SiGeHBT; transit time; power capability; liquid-nitrogen temperature;
D O I：
10.1109/MWSYM.2005.1517199
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The high-frequency behavior and power capability of SiGe HBTs with selectively implanted collector structure have been measured at temperature between 77 and 350 K. Detailed analyses of temperature dependence on dc, high-frequency parameters, and power performances are presented. An HBT transit-time analysis is also described to find out the factors causing the increase in cutoff frequency (f(Tau)) at low temperature operation of different functionality of devices. In addition, the power capability of enhanced- breakdown device at liquid-nitrogen temperature is severely degraded.
引用
收藏
页码：2239 / 2242
页数：4
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