Comparison of high-frequency noise correlation models in SiGeHBTs

被引：0

作者：

Sha, Yong-Ping ^{[1
]}

Zhang, Wan-Rong ^{[1
]}

Xie, Hong-Yun ^{[1
]}

机构：

[1] Beijing Univ Technol, Sch Elect Informat & Control Engn, Beijing 100022, Peoples R China

来源：

2007 IEEE INTERNATIONAL WORKSHOP ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY, PROCEEDINGS: ENABLING TECHNOLOGIES FOR EMERGING WIRELESS SYSTEMS | 2007年

关键词：

noise; correlation; silicon; Heterojunction bipolar transistors; HF amplifiers; simulation;

D O I：

10.1109/RFIT.2007.4443951

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Considering the noise correlation term between collector and base current shot noise, there mainly are four noise parameter models of SiGe HBTs, including the unified noise model (UNI), two SPICE noise models (SPN1, SPN2), the thermodynamic noise model (TDN). A comparison of these modets was investigated in this work. A SiGe HBT based on BiCMOS process was fabricated and its S-parameters and Minimum Noise Figure were tested. Through the comparison between the measurement and the simulation results from these models, two of the models, the UNI and the SPN2, were obviously in good agreement with the measured results at high-frequency.

引用

页码：202 / 205

页数：4

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