Development of High Temperature Operation SiC Power Module

被引：4

作者：

Sato, Shinji ^{[1
]}

Kato, Fumiki ^{[1
]}

Tanisawa, Hidekazu ^{[1
,2
]}

Koui, Kenichi ^{[1
,3
]}

Watanabe, Kinuyo ^{[1
]}

Murakami, Yoshinori ^{[1
,4
]}

Sato, Hiroshi ^{[1
]}

Yamaguchi, Hiroshi ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Tokyo, Japan

[2] Sanken Elect Co Ltd, Niiza, Japan

[3] Calson Kansei Corp, Saitama, Japan

[4] Nissan Motor Co Ltd, Yokohama, Kanagawa, Japan

来源：

GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 8 | 2018年 / 86卷 / 12期

关键词：

D O I：

10.1149/08612.0083ecst

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have developed SiC power module which realizes operation at high temperature of 250 degrees C or higher. The withstand voltage of this power module is 1200 V, and two SiC-MOSFETs are built in and constitute a circuit for one inverter phase. This power module incorporates a snubber circuit for reducing the surge voltage generated by the SiC-MOSFET during switching. Joining of the main parts in the module is done with eutectic solder with a solidus line of 350 degrees C or higher. It can operate in high temperatures up to 250 degrees C and ensures reliability at that temperature. We conducted 100 A switching test using this module. High speed switching was realized, and the turn-off switching time tf was about the same about 10 ns from room temperature to 250 degrees C. In this paper, we describe the design and performance of the developed power module.

引用

页码：83 / 90

页数：8

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