Multi-Chip SiC DMOSFET Half-Bridge Power Module for High Temperature Operation

被引：0
|
作者：
Funaki, Tsuyoshi [1 ]
Sasagawa, Masashi [2 ]
Nakamura, Takashi [2 ]
机构：
[1] Osaka Univ, Div Elect Elect & Informat Eng, Osaka, Japan
[2] Rohm Co Ltd, Res & Dev Headquaters, Kyoto, Japan
来源：
2012 TWENTY-SEVENTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC) | 2012年
关键词：
SCHOTTKY DIODE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The authors developed 80A, 1200V half bridge SiC power module for high temperature operation with connecting multiple small current rating SiC MOSFETs in parallel on a ceramic substrate. This paper characterizes and evaluates the static characteristics and switching operation capability of the developed power module from room temperature (25C) to high temperature condition (200C). First, the static current-voltage characteristics for wide temperature range are tested, and then terminal capacitance-voltage characteristics are evaluated. The switching behavior of the SiC power module is experimented and the temperature dependencies are evaluated. The results clarified the high temperature operation capability of the developed SiC power module without degrading fast switching capability.
引用
收藏
页码：2525 / 2529
页数：5
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