A High Density 250 °C Junction Temperature SiC Power Module Development

被引：24
|
作者：
Ning, Puqi [1 ]
Wang, Fei [2 ,3 ]
Zhang, Di [4 ]
机构：
[1] Chinese Acad Sci, Inst Elect Engn, Beijing 100190, Peoples R China
[2] Oak Ridge Natl Lab, Knoxville, TN 37831 USA
[3] Univ Tennessee, Knoxville, TN 37916 USA
[4] GE Co, Global Res Ctr, Power Convers Syst Lab, Niskayuna, NY 12309 USA
来源：
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS | 2014年 / 2卷 / 03期
关键词：
High-temperature techniques; semiconductor device packaging; silicon carbide; HARMONIC CANCELLATION; GATE DRIVER; DESIGN; CONVERTER; VOLTAGE; PWM;
D O I：
10.1109/JESTPE.2013.2290054
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A high temperature wirebond-packaged phase-leg power module was designed, developed, and tested. Details of the layout, gate drive, and cooling system designs are described. Continuous power tests confirmed that the designed high-density power module can be successfully operated with 250 degrees C junction temperature. The power module was further utilized in an all-SiC rectifier system that achieves a 2.78 kW/lb power density.
引用
收藏
页码：415 / 424
页数：10
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