Origin of the unusual reflectance and density contrasts in the phase-change material Cu2GeTe3

被引：35
|
作者：
Skelton, J. M. [1 ]
Kobayashi, K. [2 ,3 ,4 ]
Sutou, Y. [5 ]
Elliott, S. R. [1 ]
机构：
[1] Univ Cambridge, Dept Chem, Cambridge CB2 1EW, England
[2] Japan Atom Energy Agcy, Quantum Beam Sci Directorate, Sayo, Hyogo 6795148, Japan
[3] Hiroshima Univ, Hiroshima Synchrotron Radiat Ctr, Higashi Hiroshima City, Hiroshima 7390046, Japan
[4] Kouchi Univ Technol, Kami City, Kochi 7828502, Japan
[5] Tohoku Univ, Grad Sch Engn, Dept Mat Sci, Sendai, Miyagi 9808579, Japan
来源：
APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 22期
基金：
英国工程与自然科学研究理事会;
关键词：
TOTAL-ENERGY CALCULATIONS; AMORPHOUS THIN-FILMS; CRYSTAL-STRUCTURE; TRANSITIONS; REFINEMENT; GE1CU2TE3; MEMORY;
D O I：
10.1063/1.4809598
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The recent demonstration of Cu2GeTe3 (CGT) as a potential phase-change material (PCM) for next-generation non-volatile memories represents a significant discovery. In contrast to widely studied PCMs, amorphous CGT is denser and more reflective than crystalline CGT, and the phase transition takes place to a tetrahedrally bonded crystal, a very different geometry to the octahedrally bonded cubic structures adopted by other PCMs. We have performed a computer-simulational study of CGT, investigating the atomic-level structure and physical properties of both phases. Our results lead to hypotheses to account for the higher amorphous-phase density and reflectivity, which may provide new design criteria for identifying novel PCMs. (C) 2013 AIP Publishing LLC.
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页数：4
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