Transport solutions for the SCH quantum-well laser diode: Comment

被引：4
|
作者：
Freude, W
机构：
[1] Institut fur Hochfrequenztechnik und Quantenelektronik, Universitat Karlsruhe
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1996年 / 32卷 / 12期
关键词：
D O I：
10.1109/3.544765
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A number of errors and inconsistencies seems to occur in the paper by Taylor and Claisse. As a consequence, the main results of the paper appear to be incorrect. A simple argument provides a better understanding of the reduced ambipolar lifetime when assuming a fixed carrier concentration in the quantum well above threshold.
引用
收藏
页码：2173 / 2175
页数：3
相关论文
共 50 条
  • [21] Design considerations for GaAs/(AlGa)As SCH and GRIN-SCH quantum-well laser structures. II. The results
    Czyszanowski, T
    Wasiak, M
    Nakwaski, W
    OPTICA APPLICATA, 2001, 31 (02) : 325 - 336
  • [22] Design considerations for GaAs/(AlGa)As SCH and GRIN-SCH quantum-well laser structures. 1. The model
    Czyszanowski, T
    Wasiak, M
    Nakwaski, W
    OPTICA APPLICATA, 2001, 31 (02) : 313 - 323
  • [23] Optimisation of optical properties of a long-wavelength GaInNAs quantum-well laser diode
    Alias, M. S.
    Al-Omari, A. N.
    Maskuriy, F.
    Faiz, F.
    Mitani, S. M.
    QUANTUM ELECTRONICS, 2013, 43 (11) : 1009 - 1013
  • [24] Semipolar InGaN quantum-well laser diode with integrated amplifier for visible light communications
    Shen, Chao
    Tien Khee Ng
    Lee, Changmin
    Nakamura, Shuji
    Speck, James S.
    DenBaars, Steven P.
    Alyamani, Ahmed Y.
    El-Desouki, Munir M.
    Ooi, Boon S.
    OPTICS EXPRESS, 2018, 26 (06): : A219 - A226
  • [25] NOVEL ETCHING TECHNIQUE FOR A BURIED HETEROSTRUCTURE GAINAS/ALGAINAS QUANTUM-WELL LASER DIODE
    KASUKAWA, A
    BHAT, R
    CANEAU, C
    ZAH, CE
    KOZA, MA
    LEE, TP
    APPLIED PHYSICS LETTERS, 1991, 59 (11) : 1269 - 1271
  • [26] Characteristics of high power Al-free quantum-well laser diode array
    Hu L.
    Li Z.
    Qin L.
    Yang Y.
    Wang Y.
    Liu Y.
    Wang B.
    Wang L.
    Zhongguo Jiguang/Chinese Journal of Lasers, 2010, 37 (02): : 379 - 384
  • [27] INTEGRATED QUANTUM-WELL MANIFOLD LASER
    WATERS, RG
    EMANUEL, MA
    DALBY, RJ
    JOURNAL OF APPLIED PHYSICS, 1989, 66 (02) : 961 - 963
  • [28] QUANTUM-WELL C(3) LASER
    BYKOVSKII, YA
    DEDUSHENKO, KB
    ZVERKOV, MV
    LIKHACHEV, IG
    KVANTOVAYA ELEKTRONIKA, 1994, 21 (05): : 414 - 416
  • [29] NEW RESONANT TUNNELING DIODE WITH A DEEP QUANTUM-WELL
    TOYOSHIMA, H
    ANDO, Y
    OKAMOTO, A
    ITOH, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (09): : L786 - L788
  • [30] Quantum-well intermixing influence on GaInNAs/GaAs quantum-well laser gain: theoretical study
    Qiu, Y. N.
    Sun, H. D.
    Rorison, J. M.
    Calvez, S.
    Dawson, M. D.
    Bryce, A. C.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 23 (09)
12345