Characteristics of high power Al-free quantum-well laser diode array

被引：0
|
作者：
Hu L. [1 ,2 ]
Li Z. [1 ,2 ]
Qin L. [1 ]
Yang Y. [1 ,2 ]
Wang Y. [1 ,2 ]
Liu Y. [1 ]
Wang B. [3 ]
Wang L. [1 ]
机构：
[1] Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun
[2] Graduate University, Chinese Academy of Sciences
[3] Department of Engineering Physics, Tsinghua University
来源：
Zhongguo Jiguang/Chinese Journal of Lasers | 2010年 / 37卷 / 02期
关键词：
Duty-cycle; Finite element method; High power; Laser diode array; Lasers; Temperature;
D O I：
10.3788/CJL20103702.0379
中图分类号：
学科分类号：
摘要：
A three dimensional finite element thermal-model is presented for a micro-channel packaged high-power Al-free quantum-well laser diode array(LDA). The influence of working conditions, such as ambient temperature, operating current and duty cycle, on the temperature of the active region is simulated in this paper. And the variety of the output characteristics of LDA working under different conditions is studied experimentally. It is found that longer time to reach steady-state, higher temperature of the active region, greater red shift of peak wavelength and threshold current, lower conversion efficiency and slope efficiency and lower output power are gained when the laser diode array works at higher ambient temperature and duty cycle. The output characteristics of the laser diode array is extrapolated when it works under the conditions of 20°C ambient temperature, 20% duty-cycle and 300 A injecting current. The results show that the output power exceeds 300 W and the conversion efficiency achieves 45% and no thermal rollover appears.
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页码：379 / 384
页数：5
相关论文
共 15 条
  • [1] Endriz J.G., Vakili M., Browder G.S., Et al., High power diode laser arrays, IEEE J. Quantum Electron., 28, 4, pp. 952-965, (1992)
  • [2] Konig H., Gronninger G., Brick P., Et al., Brilliant high power laser bars for industrial applications, 6876, (2008)
  • [3] Shan X., Zhang J., Wang L., Design of 980 nm high-power semiconductor laser therapeutic equipment, Chinese J. Lasers, 33, SUPPL., pp. 435-438, (2006)
  • [4] Jimenez J., Laser diode reliability: crystal defects and degradation modes, C. R. Physique, 4, 6, pp. 663-673, (2003)
  • [5] Dhamdhere A.R., Malshe A.P., Schmidt W.F., Et al., Investigation of reliability issues in high power laser diode bar packages, Microelectronics Reliability, 43, pp. 287-295, (2003)
  • [6] Diehl R., High Power Diode Lasers, pp. 200-201, (2000)
  • [7] Song H., Wen J., Zeng X., Et al., Research of pulse injection method for measuring LD chip temperature, Chinese J. Lasers, 32, 3, pp. 407-410, (2005)
  • [8] Zhang X., Gao D., The thermal effects in semiconductor laser arrays, J. China Institute of Communications, 11, 5, pp. 34-38, (1990)
  • [9] Murata S., Nishimura K., A simple new laser diode array model for thermal interaction analysis, J. Appl. Phys., 70, 9, pp. 4715-4723, (1991)
  • [10] Zhang L., Cui B., Huang H., Et al., Steady-state temperature distribution changes of stripe quantum-well laser caused by solder void, Chinese J. Lasers, 34, 9, pp. 1203-1207, (2007)
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