Transport solutions for the SCH quantum-well laser diode: Comment

被引：4
|
作者：
Freude, W
机构：
[1] Institut fur Hochfrequenztechnik und Quantenelektronik, Universitat Karlsruhe
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1996年 / 32卷 / 12期
关键词：
D O I：
10.1109/3.544765
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A number of errors and inconsistencies seems to occur in the paper by Taylor and Claisse. As a consequence, the main results of the paper appear to be incorrect. A simple argument provides a better understanding of the reduced ambipolar lifetime when assuming a fixed carrier concentration in the quantum well above threshold.
引用
收藏
页码：2173 / 2175
页数：3
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