A 20-Gbit/s monolithic photoreceiver using InAlAs/InGaAs HEMT's and regrown p-i-n photodiode

被引：0
|
作者：
Spicher, J [1 ]
Klepser, BUH [1 ]
Beck, M [1 ]
Rudra, A [1 ]
Sachot, R [1 ]
Ilegems, M [1 ]
机构：
[1] SWISS FED INST TECHNOL,INST MICRO & OPTOELECTR,EPFL,DP,IMO,CH-1015 LAUSANNE,SWITZERLAND
来源：
1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS | 1996年
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：439 / 442
页数：4
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