Reliability Improvement for Stacked Dielectric with Low-k SiOCH Dielectric and SiCN Barrier by UV-Assisted Thermal Curing

被引：2
|
作者：
Cheng, Yi-Lung [1 ]
Lin, Yu-Lu [1 ]
Chen, Giin-Shan [2 ]
Fang, Jau-Shiung [3 ]
机构：
[1] Natl Chi Nan Univ, Dept Elect Engn, Nantou 54561, Taiwan
[2] Feng Chia Univ, Dept Mat Sci & Engn, Taichung 40724, Taiwan
[3] Natl Formosa Univ, Dept Mat Sci & Engn, Huwei 63201, Taiwan
来源：
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2020年 / 9卷 / 07期
关键词：
low-dielectric-constant; porous dielectric; SiCN; ultraviolet; reliability; time-dependent-dielectric-breakdown; CHEMICAL-VAPOR-DEPOSITION; SICXNY FILMS; TIME; BREAKDOWN;
D O I：
10.1149/2162-8777/abade7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this study, the effect of ultraviolet (UV)-assisted thermal curing on the electrical properties and reliability of a SiCN/SiCOH stacked dielectric was investigated. UV-assisted thermal curing on the SiCN/ porogen-contained SiOCH stacked dielectric did not impose any improvement due to the remained carbon residues at the interface. With the SiCN capping layer, carbon residues resulted from porogen precursor in the SiOCH film were limited, thereby hardly diffusing out to air. On the other hand, for the SiCN/porous SiOCH (p-siOCH) stacked dielectric, post UV-assisted thermal curing indeed improved the hardness, adhesion, electrical characteristics, and reliability. Additionally, its barrier capacity against Cu migration under an annealing at 450 degrees C was not degraded for UV-assisted thermal cured SiCN/p-SiOCH stacked dielectrics. Consequently, post UV-assisted thermal curing on an integrated dielectric stack with a porous low-kSiOCH dielectric and a SiCN capping barrier is a promising processing for reliability enhancement.
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页数：7
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