A GaAs0.5Sb0.5/In0.53Ga0.47As heterojunction Z-gate TFET with hetero-gate-dielectric

被引：10
|
作者：
Yan, Zhirui [1 ]
Li, Cong [1 ]
Guo, Jiamin [1 ]
Zhuang, Yiqi [1 ]
机构：
[1] Xidian Univ, Sch Microelect, Xian 710071, Shaanxi, Peoples R China
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2019年 / 129卷
关键词：
tunneling field effect transistor; Z-gate; Heterojunction; Hetero-gate-dielectric; FIELD-EFFECT TRANSISTOR; WORK FUNCTION; ENGINEERED TFET; TUNNEL FETS; PERFORMANCE; SUPPRESSION; BANDGAP; DEVICE;
D O I：
10.1016/j.spmi.2019.04.006
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
In this paper, a GaAs0.5Sb0.5/In0.53Ga0.47As heterojunction Z-gate tunnel FET combined with hetero-gate-dielectric (HGD-HZ-TFET) is proposed. By using TCAD simulation tools, the DC electrical characteristics, energy-band diagrams, distribution of electric field and band-to-band tunneling (BTBT) generation rate of HGD-HZ-TFET are investigated and compared with that of In0.53Ga0.47As homojunction Z-TFET. In addition, analog/RF performance of HGD-HZ-TFET are also investigated in terms of cut-off frequency, gain bandwidth production and transient time. Finally, the influence of the lateral length of the gate overlap channel (T-overlap) and the elemental components of GaAs1-xSbx and In1-yGayAs on the performance of the HGD-HZ-TFET is studied. The simulation results indicate that the proposed HGD-HZ-TFET achieves higher on-current, steeper subthreshold swing, lower ambipolar current and more superior analog/RF performance in comparison to the In0.53Ga0.47As homojunction Z-TFET.
引用
下载
收藏
页码：282 / 293
页数：12
相关论文
共 50 条
  • [41] Impact of Forming Gas Annealing on the Performance of Surface-Channel In0.53Ga0.47As MOSFETs With an ALD Al2O3 Gate Dielectric
    Djara, Vladimir
    Cherkaoui, Karim
    Schmidt, Michael
    Monaghan, Scott
    O'Connor, Eamon
    Povey, Ian M.
    O'Connell, Dan
    Pemble, Martyn E.
    Hurley, Paul K.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (04) : 1084 - 1090
  • [42] Electron Mobility in Surface- and Buried-Channel Flatband In0.53Ga0.47As MOSFETs With ALD Al2O3 Gate Dielectric
    Bentley, Steven J.
    Holland, Martin
    Li, Xu
    Paterson, Gary W.
    Zhou, Haiping
    Ignatova, Olesya
    Macintyre, Douglas
    Thoms, Stephen
    Asenov, Asen
    Shin, Byungha
    Ahn, Jaesoo
    McIntyre, Paul C.
    Thayne, Iain G.
    IEEE ELECTRON DEVICE LETTERS, 2011, 32 (04) : 494 - 496
  • [43] Interface state densities, low frequency noise and electron mobility in surface channel In0.53Ga0.47As n-MOSFETs with a ZrO2 gate dielectric
    Negara, Muhammad Adi
    Goel, Niti
    Bauza, Daniel
    Ghibaudo, Gerard
    Hurley, Paul K.
    MICROELECTRONIC ENGINEERING, 2011, 88 (07) : 1095 - 1097
  • [44] Performance enhancement of p-GaAs0.51Sb0.49/In0.53Ga0.47As hetero-junction vertical tunneling field-effect transistors with abrupt source impurity profile
    Gotow, Takahiro
    Mitsuhara, Manabu
    Hoshi, Takuya
    Sugiyama, Hiroki
    Takenaka, Mitsuru
    Takagi, Shinichi
    JOURNAL OF APPLIED PHYSICS, 2019, 126 (21)
  • [45] High performance 0.35 μm gate-length monolithic enhancement/depletion-mode metamorphic In0.52Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrates
    Dumka, DC
    Hoke, WE
    Lemonias, PJ
    Cueva, G
    Adesida, I
    IEEE ELECTRON DEVICE LETTERS, 2001, 22 (08) : 364 - 366
  • [46] In situ H2S passivation of In0.53Ga0.47As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric
    O'Connor, E.
    Long, R. D.
    Cherkaoui, K.
    Thomas, K. K.
    Chalvet, F.
    Povey, I. M.
    Pemble, M. E.
    Hurley, P. K.
    Brennan, B.
    Hughes, G.
    Newcomb, S. B.
    APPLIED PHYSICS LETTERS, 2008, 92 (02)
  • [47] SUBMICRON-GATE IN0.52AL0.48AS/IN0.53GA0.47AS/IN0.52AL0.48AS HETEROJUNCTION METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS GROWN BY MOLECULAR-BEAM EPITAXY
    KUANG, JB
    TASKER, PJ
    CHEN, YK
    WANG, GW
    EASTMAN, LF
    AINA, OA
    HIER, H
    FATHIMULLA, A
    APPLIED PHYSICS LETTERS, 1989, 54 (12) : 1136 - 1138
  • [48] Inversion-Type Surface Channel In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors with Metal-Gate/High-k Dielectric Stack and CMOS-Compatible PdGe Contacts
    Chin, Hock-Chun
    Liu, Xinke
    Tan, Leng-Seow
    Yeo, Yee-Chia
    PROCEEDINGS OF TECHNICAL PROGRAM: 2009 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS, 2009, : 143 - 144
  • [49] LOW-FREQUENCY AND MICROWAVE CHARACTERIZATION OF SUBMICRON-GATE IN0.52AL0.48AS/IN0.53GA0.47AS/IN0.52AL0.48AS HETEROJUNCTION METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS GROWN BY MOLECULAR-BEAM EPITAXY
    KUANG, JB
    TASKER, PJ
    RATANAPHANYARAT, S
    SCHAFF, WJ
    EASTMAN, LF
    WANG, GW
    CHEN, YK
    AINA, OA
    HIER, H
    FATHIMULLA, A
    JOURNAL OF APPLIED PHYSICS, 1989, 66 (12) : 6168 - 6174
  • [50] Electron mobility improvement by in situ annealing before deposition of HfO2 gate dielectric with equivalent oxide thickness of sub-1.0 nm in In0.53Ga0.47As n-type metal-insulator-semiconductor field-effect transistor
    Oda, Minoru
    Irisawa, Toshifumi
    Jevasuwan, Wipakorn
    Maeda, Tatsuro
    Kamimuta, Yuuichi
    Ichikawa, Osamu
    Ishihara, Toshio
    Osada, Takenori
    Tezuka, Tsutomu
    APPLIED PHYSICS EXPRESS, 2014, 7 (06)
12345