Electron mobility improvement by in situ annealing before deposition of HfO2 gate dielectric with equivalent oxide thickness of sub-1.0 nm in In0.53Ga0.47As n-type metal-insulator-semiconductor field-effect transistor

被引：0

作者：

Oda, Minoru ^{[1
]}

Irisawa, Toshifumi ^{[1
]}

Jevasuwan, Wipakorn ^{[1
]}

Maeda, Tatsuro ^{[1
]}

Kamimuta, Yuuichi ^{[1
]}

Ichikawa, Osamu ^{[2
]}

Ishihara, Toshio ^{[2
]}

Osada, Takenori ^{[2
]}

Tezuka, Tsutomu ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Collaborat Res Team, Green Nanoelect Ctr, Tsukuba, Ibaraki 3058569, Japan

[2] Sumitomo Chem Co Ltd, IT Related Chem Res Lab, Tsukuba, Ibaraki 3003294, Japan

来源：

APPLIED PHYSICS EXPRESS | 2014年 / 7卷 / 06期

基金：

日本学术振兴会;

关键词：

ATOMIC-LAYER DEPOSITION; INGAAS; PERFORMANCE; MOSFETS; AL2O3; DESORPTION;

D O I：

10.7567/APEX.7.061202

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electron mobility in HfO2/In0.53Ga0.47As n-type metal-insulator-semiconductor field-effect transistors (nMISFETs) has been found to be significantly enhanced in the sub-1.0 nm equivalent oxide thickness (EOT) regime by annealing before the atomic layer deposition (ALD) of the HfO2 gate dielectric. XPS measurements revealed that the predeposition annealing increased the amount of GaOx and reduced the amount of AsOx at the MIS interface, which is considered to reduce the trapped charge density and enhance the mobility, especially in the low-surface-carrier-density region. (C) 2014 The Japan Society of Applied Physics

引用

页数：4

共 29 条

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Chen, Yen-Ting
Zhao, Han
Wang, Yanzhen
Xue, Fei
Zhou, Fei
Lee, Jack C.
APPLIED PHYSICS LETTERS, 2010, 96 (10)
[2] Effects of In-Situ Plasma-Enhanced Atomic Layer Deposition Treatment on the Performance of HfO2/In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors
Quang Ho Luc
Cheng, Shou Po
Chang, Po Chun
Huy Binh Do
Chen, Jin Han
Minh Thien Huu Ha
Sa Hoang Huynh
Hu, Chenming Calvin
Lin, Yueh Chin
Chang, Edward Yi
IEEE ELECTRON DEVICE LETTERS, 2016, 37 (08) : 974 - 977
[3] Effects of fluorine incorporation into HfO2 gate dielectrics on InP and In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors
Chen, Yen-Ting
Zhao, Han
Wang, Yanzhen
Xue, Fei
Zhou, Fei
Lee, Jack C.
APPLIED PHYSICS LETTERS, 2010, 96 (25)
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APPLIED PHYSICS LETTERS, 2012, 100 (06)
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O'Connor, E.
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APPLIED PHYSICS LETTERS, 2008, 92 (02)
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APPLIED PHYSICS LETTERS, 2011, 99 (04)
[7] Lg=80-nm Trigate Quantum-Well In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors With Al2O3/HfO2 Gate-Stack
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Kim, Dae-Hyun
IEEE ELECTRON DEVICE LETTERS, 2015, 36 (03) : 223 - 225
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Koveshnikov, S.
Goel, N.
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APPLIED PHYSICS LETTERS, 2008, 92 (22)
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Zhao, Han
Yum, Jung Hwan
Chen, Yen-Ting
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2009, 27 (04): : 2024 - 2027
[10] Inversion-type indium phosphide metal-oxide-semiconductor field-effect transistors with equivalent oxide thickness of 12 Å using stacked HfAlOx/HfO2 gate dielectric
Zhao, Han
Shahrjerdi, Davood
Zhu, Feng
Kim, Hyoung-Sub
Ok, Injo
Zhang, Manghong
Yum, Jung Hwan
Banerjee, Sanjay K.
Lee, Jack C.
APPLIED PHYSICS LETTERS, 2008, 92 (25)

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