Electron mobility improvement by in situ annealing before deposition of HfO2 gate dielectric with equivalent oxide thickness of sub-1.0 nm in In0.53Ga0.47As n-type metal-insulator-semiconductor field-effect transistor

被引：0

作者：

Oda, Minoru ^{[1
]}

Irisawa, Toshifumi ^{[1
]}

Jevasuwan, Wipakorn ^{[1
]}

Maeda, Tatsuro ^{[1
]}

Kamimuta, Yuuichi ^{[1
]}

Ichikawa, Osamu ^{[2
]}

Ishihara, Toshio ^{[2
]}

Osada, Takenori ^{[2
]}

Tezuka, Tsutomu ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Collaborat Res Team, Green Nanoelect Ctr, Tsukuba, Ibaraki 3058569, Japan

[2] Sumitomo Chem Co Ltd, IT Related Chem Res Lab, Tsukuba, Ibaraki 3003294, Japan

来源：

APPLIED PHYSICS EXPRESS | 2014年 / 7卷 / 06期

基金：

日本学术振兴会;

关键词：

ATOMIC-LAYER DEPOSITION; INGAAS; PERFORMANCE; MOSFETS; AL2O3; DESORPTION;

D O I：

10.7567/APEX.7.061202

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electron mobility in HfO2/In0.53Ga0.47As n-type metal-insulator-semiconductor field-effect transistors (nMISFETs) has been found to be significantly enhanced in the sub-1.0 nm equivalent oxide thickness (EOT) regime by annealing before the atomic layer deposition (ALD) of the HfO2 gate dielectric. XPS measurements revealed that the predeposition annealing increased the amount of GaOx and reduced the amount of AsOx at the MIS interface, which is considered to reduce the trapped charge density and enhance the mobility, especially in the low-surface-carrier-density region. (C) 2014 The Japan Society of Applied Physics

引用

页数：4

共 29 条

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[12] High mobility HfO2-based In0.53Ga0.47As n-channel metal-oxide-semiconductor field effect transistors using a germanium interfacial passivation layer
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[19] Positive Bias Temperature Instability and Hot Carrier Injection of Back Gate Ultra-thin-body In0.53Ga0.47As-on-Insulator n-Channel Metal-Oxide-Semiconductor Field-Effect Transistor
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[20] Positive Bias Temperature Instability and Hot Carrier Injection of Back Gate Ultra-thin-body In0.53Ga0.47As-on-Insulator n-Channel Metal-Oxide-Semiconductor Field-Effect Transistor
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