A GaAs0.5Sb0.5/In0.53Ga0.47As heterojunction Z-gate TFET with hetero-gate-dielectric

被引：10
|
作者：
Yan, Zhirui [1 ]
Li, Cong [1 ]
Guo, Jiamin [1 ]
Zhuang, Yiqi [1 ]
机构：
[1] Xidian Univ, Sch Microelect, Xian 710071, Shaanxi, Peoples R China
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2019年 / 129卷
关键词：
tunneling field effect transistor; Z-gate; Heterojunction; Hetero-gate-dielectric; FIELD-EFFECT TRANSISTOR; WORK FUNCTION; ENGINEERED TFET; TUNNEL FETS; PERFORMANCE; SUPPRESSION; BANDGAP; DEVICE;
D O I：
10.1016/j.spmi.2019.04.006
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
In this paper, a GaAs0.5Sb0.5/In0.53Ga0.47As heterojunction Z-gate tunnel FET combined with hetero-gate-dielectric (HGD-HZ-TFET) is proposed. By using TCAD simulation tools, the DC electrical characteristics, energy-band diagrams, distribution of electric field and band-to-band tunneling (BTBT) generation rate of HGD-HZ-TFET are investigated and compared with that of In0.53Ga0.47As homojunction Z-TFET. In addition, analog/RF performance of HGD-HZ-TFET are also investigated in terms of cut-off frequency, gain bandwidth production and transient time. Finally, the influence of the lateral length of the gate overlap channel (T-overlap) and the elemental components of GaAs1-xSbx and In1-yGayAs on the performance of the HGD-HZ-TFET is studied. The simulation results indicate that the proposed HGD-HZ-TFET achieves higher on-current, steeper subthreshold swing, lower ambipolar current and more superior analog/RF performance in comparison to the In0.53Ga0.47As homojunction Z-TFET.
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页码：282 / 293
页数：12
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