Removing foxing stains from old paper at 157nm

被引:0
|
作者
Cefalas, AC [1 ]
Sarantopoulou, E [1 ]
Kollia, Z [1 ]
Argitis, P [1 ]
机构
[1] Natl Hellen Res Fdn, Athens, Greece
关键词
Vacuum Ultraviolet; 157nm; Mass spectroscopy; cellulose; old manuscripts; ablation;
D O I
10.1117/12.445656
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Using a molecular fluorine laser at 157nm foxing stains were removed successfully from a 16(th) century old paper. Laser cleaning of stains and foxing from old paper manuscripts is far more effective at 157nm in comparison to different wavelengths without any yellowish after-effect on the paper. This is because at 157nm illumination of old paper, complete bond breaking of all the organic molecules of the paper is taking place. Mass spectroscopy at 157nm and for moderate laser intensities up to 1 mJ/cm(2) of old paper suffering from foxing and including remains of sticky - tape and stains, indicate organic matter disintegration to small photofragments atomic, diatomic or triatomic, which are flying apart with supersonic speed. This is because the dissociative excited states of the small organic radicals, occupy the energy region above 6.5 eV (200nm).
引用
收藏
页码:139 / 144
页数:6
相关论文
共 50 条
  • [21] Selete activity of 157nm lithography and masks
    Yoshioka, N
    Itani, T
    Wakamiya, W
    19TH EUROPEAN CONFERENCE ON MASK TECHNOLOGY FOR INTEGRATED CIRCUITS AND MICROCOMPONENTS, 2003, 5148 : 220 - 224
  • [22] Role of bilayer resist in 157nm lithography
    Bowden, M
    Malik, S
    Dilocker, S
    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, 2003, 16 (04) : 629 - 635
  • [23] Properties of fused silica for 157nm photomasks
    Moore, LA
    Smith, CM
    19TH ANNUAL SYMPOSIUM ON PHOTOMASK TECHNOLOGY, PTS 1 AND 2, 1999, 3873 : 392 - 401
  • [24] Applications of a grating shearing interferometer at 157nm
    Schreiber, H
    Dewa, P
    Dunn, M
    Hordin, R
    Mack, S
    Statt, B
    Tompkins, P
    OPTICAL MICROLITHOGRAPHY XIV, PTS 1 AND 2, 2001, 4346 : 1095 - 1106
  • [25] The challenges in materials design for 157nm photoresists
    Patterson, K
    Somervell, M
    Willson, CG
    SOLID STATE TECHNOLOGY, 2000, 43 (03) : 41 - +
  • [26] SVG 157nm lithography technical review
    Fahey, T
    McClay, J
    Hansen, M
    Tirri, B
    Lipson, M
    OPTICAL MICROLITHOGRAPHY XIV, PTS 1 AND 2, 2001, 4346 : 72 - 80
  • [27] The 157nm lithography program at international SEMATECH
    Dao, G
    Yen, A
    Trybula, W
    PHOTOMASK AND NEXT-GENERATION LITHOGRAPHY MASK TECHNOLOGY IX, 2002, 4754 : 26 - 32
  • [28] 157nm optical lithography: The accomplishments and the challenges
    SVG Lithography Inc., Wilton, CT, United States
    不详
    不详
    不详
    Solid State Technol, 6 (57-68):
  • [29] The design of resist materials for 157nm lithography
    Willson, CG
    Trinque, BC
    Osborn, BP
    Chambers, CR
    Hsieh, YT
    Chiba, T
    Zimmerman, P
    Miller, D
    Conley, W
    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, 2002, 15 (04) : 583 - 590
  • [30] Development of SSQ based 157nm photoresist
    Hung, RJ
    Chiba, T
    Iwasawa, H
    Hayashi, A
    Yamahara, N
    Shimokawa, T
    JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY, 2003, 16 (04) : 591 - 594