The valence band parameters of CoSb3 determined by Shubnikov-de Haas effect

被引:9
|
作者
Rakoto, H
Respaud, M
Broto, JM
Arushanaov, E
Caillat, T
机构
[1] INSA, SNCMP, F-31077 Toulouse, France
[2] CSIC, ICMAB, Bellaterra 08193, Spain
[3] Moldavian Acad Sci, Inst Appl Phys, Kishinev 277028, Moldova
[4] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA
来源
PHYSICA B | 1999年 / 269卷 / 01期
关键词
CoSb3; band parameters; Shubnikov-de Haas oscillations;
D O I
10.1016/S0921-4526(99)00094-0
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The results of Shubnikov-de Haas (SdH) oscillation measurements on p-CoSb3 single crystals are presented. The values of the cyclotron effective mass were determined. It was found that the effective mass increases from 0.11 m(0), to 0.15 m(0) with increasing hole concentration, indicating a non-parabolicity of the valence band of CoSb3. Using the two-band Kane model a band-edge effective mass of m(n)/m(0) = 0.050 +/- 0.002 and an energy gap E-g = 35 +/- 2 meV were estimated. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:13 / 16
页数:4
相关论文
共 50 条
  • [31] Shubnikov-de Haas oscillation in PuIn3
    Haga, Yoshinori
    Bauer, Eric D.
    Tobash, Paul H.
    Mitchell, Jeremy N.
    Ayala-Valenzuela, Oscar
    McDonald, Ross D.
    Mielke, Charles H.
    Fisk, Zachary
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2013, 63 (03) : 380 - 382
  • [32] CONDUCTION-BAND PARAMETERS OF BI2SE3 FROM SHUBNIKOV-DE HAAS INVESTIGATIONS
    KOHLER, H
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1973, 58 (01): : 91 - 100
  • [33] Resistivity, Hall effect, and Shubnikov-de Haas oscillations in CeNiSn
    Terashima, T
    Terakura, C
    Uji, S
    Aoki, H
    Echizen, Y
    Takabatake, T
    PHYSICAL REVIEW B, 2002, 66 (07):
  • [34] Quasi-two-dimensional Shubnikov-de Haas effect
    Averkiev, NS
    Golub, LE
    Tarasenko, SA
    JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS, 2000, 90 (02) : 360 - 362
  • [35] Diffusion size effect in the Shubnikov-de Haas oscillation of antimony
    Satoh, N
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (4A): : 2033 - 2038
  • [36] NONLOCAL SHUBNIKOV-DE HAAS EFFECT IN SI-MOSFETS
    OTO, K
    TAKAOKA, S
    MURASE, K
    SUYAMA, S
    SERIKAWA, T
    SURFACE SCIENCE, 1992, 263 (1-3) : 303 - 306
  • [37] SHUBNIKOV-DE HAAS EFFECT OF N-TYPE HGTE
    YAMAMOTO, M
    FUKUROI, T
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1966, 21 (11) : 2428 - &
  • [38] FERMI SURFACE OF TIN TELLURIDE - SHUBNIKOV-DE HAAS EFFECT
    BURKE, JR
    HOUSTON, B
    SAVAGE, HT
    BABISKIN, J
    SIEBENMA.PG
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1966, S 21 : 384 - &
  • [39] Shubnikov-de Haas effect in the superconducting state of an organic superconductor
    Wosnitza, J
    Wanka, S
    Hagel, J
    Häussler, R
    von Löhneysen, H
    Schlueter, JA
    Geiser, U
    Nixon, PG
    Winter, RW
    Gard, GL
    PHYSICAL REVIEW B, 2000, 62 (18) : 11973 - 11976
  • [40] Determination of parametrs in semiconductors using the Shubnikov-de Haas effect
    Kornilovich, AA
    APEIE-98: 1998 4TH INTERNATIONAL CONFERENCE ON ACTUAL PROBLEMS OF ELECTRONIC INSTRUMENT ENGINEERING PROCEEDINGS, VOL 1, 1998, : 22 - 23