Determination of parametrs in semiconductors using the Shubnikov-de Haas effect

被引:0
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作者
Kornilovich, AA [1 ]
机构
[1] State Tech Univ, Novosibirsk, Russia
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The oscillations of reflect-ion and transmission coefficients of the probing radiation (Shubnikov-de Haas (SdH) effect) in a low-dimensional structures GaAs/AlGaAs, containing the quantum wells,;and in a degenerate n-InSb at low temperature (similar to 2 K) were investigated. The possibility to contactless determination of the transport parameters in semiconductors, based on the observations of the oscillations SdH at temperatures liquid nitrogen, is discussed.
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页码:22 / 23
页数:2
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