Characterization of MBE-grown II-VI semiconductor distributed Bragg reflectors

被引：2

作者：

Peiris, FC ^{[1
]}

Lee, S

Bindley, U

Furdyna, JK

Stuckey, AM

Martin, MR

Buschert, JR

机构：

[1] Univ Notre Dame, Dept Phys, Notre Dame, IN 46556 USA

[2] Goshen Coll, Dept Phys, Turner Lab, Goshen, IN 46526 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 201卷

基金：

美国国家科学基金会;

关键词：

distributed Bragg reflectors; reflectivity; II-VI semiconductors; MBE;

D O I：

10.1016/S0022-0248(98)01520-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have grown distributed Bragg reflectors (DBRs) using two different combinations of II-VI semiconductor materials: ZnSe/Zn0.84Mg0.16S0.07Se0.93 and ZnSe/ZnTe. The nearly lattice matched ZnSe/ZnMgSSe system showed a reflectivity maximum near 470 nm, but only with the modest value of 70%. The strained ZnSe/ZnTe system, on the other hand, has over 90% reflectivity near 725 nm. Furthermore, the higher reflectivity in the ZnSe/ZnTe system is achieved with only 15 periods, compared to the 50 periods in the ZnSe/ZnMgSSe system. It is also found that the ZnSe/ZnTe system produces a stop band nearly 5 times wider than the ZnSe/ZnMgSSe system. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：1040 / 1043

页数：4

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