Compact green laser converter with injection pumping, based on MBE grown II-VI nanostructures

被引：7

作者：

Ivanov, S. V. ^{[1
]}

Lutsenko, E. V. ^{[2
]}

Sorokin, S. V. ^{[1
]}

Sedova, I. V. ^{[1
]}

Gronin, S. V. ^{[1
]}

Voinilovich, A. G. ^{[2
]}

Tarasuk, N. P. ^{[2
]}

Yablonskii, G. P. ^{[2
]}

Kop'ev, P. S. ^{[1
]}

机构：

[1] AF Ioffe Phys Tech Inst, RAS, St Petersburg 194021, Russia

[2] NAS Belarus, BI Stepanov Phys Inst, Minsk 220072, BELARUS

来源：

JOURNAL OF CRYSTAL GROWTH | 2009年 / 311卷 / 07期

关键词：

Low dimensional structures; Molecular beam epitaxy; Cadmium compounds; Semiconducting II-VI materials; Solid state laser; Laser diode;

D O I：

10.1016/j.jcrysgro.2008.11.032

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A violet-green integrated laser converter with a quantum efficiency of similar to 1% at a wavelength of 515 nm has been fabricated on the basis of a CdSe/ZnSSe/ZnMgSSe quantum dot (QD) laser heterostructure, The structure is optically pumped by a 416 nm emission of a commercial InGaN/GaN-pulsed laser diode via a microlens system. Different designs of the CdSe QD laser structures grown by molecular beam epitaxy have been employed, with the maximum efficiency being achieved in the structure comprising five electronically coupled CdSe QD active layers embedded in a ZnSSe/ZnSe superlattice waveguide. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：2120 / 2122

页数：3

共 50 条

[1] MBE-Grown II-VI and Related Nanostructures
Sou, I. K.
Lok, S. K.
Wang, G.
Wang, N.
Wong, G. K. L.
JOURNAL OF ELECTRONIC MATERIALS, 2010, 39 (07) : 882 - 892
[2] Violet-green laser converter based on MBE grown II-VI green lasers with multiple CdSe quantum dot sheets, pumped by InGaN laser diode
Lutsenko, Evgenii V.
Sorokin, Sergey V.
Sedova, Irina V.
Vainilovich, Aliaksei G.
Tarasuk, Nikolai P.
Pavlovskii, Viacheslav N.
Yablonskii, Gennadii P.
Gronin, Sergey V.
Kop'ev, Pyotr S.
Ivanov, Sergey V.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2010, 247 (06): : 1557 - 1560
[3] MBE-grown laser diodes based on beryllium containing II-VI semiconductors
Lugauer, HJ
Keim, M
Reuscher, G
Grabs, P
Lunz, U
Waag, A
Landwehr, G
Ivanov, S
Shubina, T
Toropov, A
Il'inskaya, N
Kop'ev, P
Alferov, Z
JOURNAL OF CRYSTAL GROWTH, 1999, 201 : 927 - 932
[4] Green electron-beam pumped laser arrays based on II-VI nanostructures
Zverev, M. M.
Ivanov, S. V.
Gamov, N. A.
Zdanova, E. V.
Studionov, V. B.
Peregoudov, D. V.
Sedova, I. V.
Gronin, S. V.
Sorokin, S. V.
Kop'ev, P. S.
Olikhov, I. M.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2010, 247 (06): : 1561 - 1563
[5] MBE-Grown II–VI and Related Nanostructures
I. K. Sou
S.K. Lok
G. Wang
N. Wang
G.K.L. Wong
Journal of Electronic Materials, 2010, 39 : 882 - 892
[6] Review of II-VI green laser diodes
Okuyama, H
IEICE TRANSACTIONS ON ELECTRONICS, 2000, E83C (04) : 536 - 545
[7] Progress of Be-Based II-VI Green to Yellow Laser Diodes
Tanaka, S.
Kasai, J.
Fujisaki, S.
Tsuji, S.
Akimoto, R.
Hasama, T.
Ishikawa, H.
2013 CONFERENCE ON LASERS AND ELECTRO-OPTICS PACIFIC RIM (CLEO-PR), 2013,
[8] Cathodoluminescence of ZnSe-based II-VI green laser heterostructures
Shakhmin, Alexey A.
Sedova, Irina V.
Sorokin, Sergey V.
Zamoryanskaya, Maria V.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 8-9, 2012, 9 (8-9): : 1840 - 1843
[9] Characterization of MBE-grown II-VI semiconductor distributed Bragg reflectors
Peiris, FC
Lee, S
Bindley, U
Furdyna, JK
Stuckey, AM
Martin, MR
Buschert, JR
JOURNAL OF CRYSTAL GROWTH, 1999, 201 : 1040 - 1043
[10] Characterization of MBE-grown II-VI semiconductor distributed Bragg reflectors
Peiris, F.C.
Lee, S.
Bindley, U.
Furdyna, J.K.
Stuckey, A.M.
Martin, M.R.
Buschert, J.R.
Journal of Crystal Growth, 1999, 201 : 1040 - 1043

← 1 2 3 4 5 →