Characterization of MBE-grown II-VI semiconductor distributed Bragg reflectors

被引：2
|
作者：
Peiris, FC [1 ]
Lee, S
Bindley, U
Furdyna, JK
Stuckey, AM
Martin, MR
Buschert, JR
机构：
[1] Univ Notre Dame, Dept Phys, Notre Dame, IN 46556 USA
[2] Goshen Coll, Dept Phys, Turner Lab, Goshen, IN 46526 USA
来源：
JOURNAL OF CRYSTAL GROWTH | 1999年 / 201卷
基金：
美国国家科学基金会;
关键词：
distributed Bragg reflectors; reflectivity; II-VI semiconductors; MBE;
D O I：
10.1016/S0022-0248(98)01520-6
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We have grown distributed Bragg reflectors (DBRs) using two different combinations of II-VI semiconductor materials: ZnSe/Zn0.84Mg0.16S0.07Se0.93 and ZnSe/ZnTe. The nearly lattice matched ZnSe/ZnMgSSe system showed a reflectivity maximum near 470 nm, but only with the modest value of 70%. The strained ZnSe/ZnTe system, on the other hand, has over 90% reflectivity near 725 nm. Furthermore, the higher reflectivity in the ZnSe/ZnTe system is achieved with only 15 periods, compared to the 50 periods in the ZnSe/ZnMgSSe system. It is also found that the ZnSe/ZnTe system produces a stop band nearly 5 times wider than the ZnSe/ZnMgSSe system. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：1040 / 1043
页数：4
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