Growth and characterization of II-VI structures for microcavities, distributed Bragg reflectors, and blue-green lasers

This paper describes the preparation of ZnSe-based distributed Bragg reflectors (DBRs), microcavities, and edge-emitting lasers using molecular beam epitaxy in conjunction with an in situ growth monitoring method. MgZnSSe/ZnSSe DBR's with up to 90% reflectance have been prepared. A monolithic lambda-ZnSSe microcavity with MgZnSSe/ZnSSe DBR and ZnCdSe quantum wells have also been grown. The microcavity exhibits features which are related to the presence of resonant Fabry-Perot cavity and quantum well exciton modes. Edge-emitting MgZnSSe/ZnSSe/ZnCdSe lasers with inverted doping configuration and GaInP/AlInP barrier reduction layers have been made. They operate at room temperature in pulsed mode, emitting at a wavelength of 520 nm.