Characterization of MBE-grown II-VI semiconductor distributed Bragg reflectors

被引：2
|
作者：
Peiris, FC [1 ]
Lee, S
Bindley, U
Furdyna, JK
Stuckey, AM
Martin, MR
Buschert, JR
机构：
[1] Univ Notre Dame, Dept Phys, Notre Dame, IN 46556 USA
[2] Goshen Coll, Dept Phys, Turner Lab, Goshen, IN 46526 USA
来源：
JOURNAL OF CRYSTAL GROWTH | 1999年 / 201卷
基金：
美国国家科学基金会;
关键词：
distributed Bragg reflectors; reflectivity; II-VI semiconductors; MBE;
D O I：
10.1016/S0022-0248(98)01520-6
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We have grown distributed Bragg reflectors (DBRs) using two different combinations of II-VI semiconductor materials: ZnSe/Zn0.84Mg0.16S0.07Se0.93 and ZnSe/ZnTe. The nearly lattice matched ZnSe/ZnMgSSe system showed a reflectivity maximum near 470 nm, but only with the modest value of 70%. The strained ZnSe/ZnTe system, on the other hand, has over 90% reflectivity near 725 nm. Furthermore, the higher reflectivity in the ZnSe/ZnTe system is achieved with only 15 periods, compared to the 50 periods in the ZnSe/ZnMgSSe system. It is also found that the ZnSe/ZnTe system produces a stop band nearly 5 times wider than the ZnSe/ZnMgSSe system. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：1040 / 1043
页数：4
相关论文
共 50 条
  • [21] Characterization of Distributed Bragg Reflectors
    Grieco, Andrew
    Fainman, Yeshaiahu
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2014, 50 (06) : 453 - 457
  • [22] Refractive index measurements of MgZnCdSe II-VI compound semiconductors grown on InP substrates and fabrications of 500-600 nm range MgZnCdSe distributed Bragg reflectors
    Morita, T
    Shinbo, H
    Nagano, T
    Nomura, I
    Kikuchi, A
    Kishino, K
    JOURNAL OF APPLIED PHYSICS, 1997, 81 (11) : 7575 - 7579
  • [23] Study on electrical properties of II-VI-based distributed Bragg reflectors
    Otte, K
    Kruse, C
    Dennemarck, J
    Hommel, D
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 4, 2006, 3 (04): : 1217 - +
  • [24] Refractive index measurements of MgZnCdSe II-VI compound semiconductors grown on InP substrates and fabrications of 500-600 nm range MgZnCdSe distributed Bragg reflectors
    J Appl Phys, 11 (7575):
  • [25] MBE OF WIDE BANDGAP II-VI COMPOUNDS
    GUNSHOR, RL
    KOBAYASHI, M
    KOLODZIEJSKI, LA
    OTSUKA, N
    NURMIKKO, AV
    JOURNAL OF CRYSTAL GROWTH, 1990, 99 (1-4) : 390 - 398
  • [26] Defects of the structure of semiconductor superlattices grown on the basis of II-VI alloys
    Kuznetsov, G. F.
    SEMICONDUCTORS, 2007, 41 (10) : 1255 - 1262
  • [27] Optical Characterization of MBE-grown ZnO Epilayers
    Karaliunas, Mindaugas
    Serevicius, Tomas
    Kuokstis, Edmundas
    Jursenas, Saulius
    Ting, Shao-Ying
    Huang, Jeng-Jie
    Yang, Chih-Chung
    INTER ACADEMIA 2010: GLOBAL RESEARCH AND EDUCATION, 2011, 222 : 86 - +
  • [28] Mechanochemical Synthesis and Characterization of Group II-VI Semiconductor Nanoparticles
    Tolia, Jyoti V.
    Chakraborty, Mousumi
    Murthy, Z. V. P.
    PARTICULATE SCIENCE AND TECHNOLOGY, 2012, 30 (06) : 533 - 542
  • [29] Microstructural and optical evaluation of nitride light-emitting diodes and II-VI distributed Bragg reflectors combined by direct wafer bonding
    Murai, A
    Kruse, C
    Samonji, K
    McCarthy, L
    Speck, JS
    Mishra, UK
    DenBaars, SP
    Hommel, D
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (28-32): : L958 - L960
  • [30] Microstructural and optical evaluation of nitride light-emitting diodes and II-VI distributed bragg reflectors combined by direct wafer bonding
    Murai, Akihiko
    Kruse, Carsten
    Samonji, Katsuya
    Mccarthy, Lee
    Speck, James S.
    Mishra, Umesh K.
    DenBaars, Steven P.
    Hommel, Detlef
    Japanese Journal of Applied Physics, Part 2: Letters, 2005, 44 (28-32):
12345