Scalable printed electronics: an organic decoder addressing ferroelectric non-volatile memory

被引:103
|
作者
Ng, Tse Nga [1 ]
Schwartz, David E. [1 ]
Lavery, Leah L. [1 ]
Whiting, Gregory L. [1 ]
Russo, Beverly [1 ]
Krusor, Brent [1 ]
Veres, Janos [1 ]
Broms, Per [2 ]
Herlogsson, Lars [2 ]
Alam, Naveed [2 ]
Hagel, Olle [2 ]
Nilsson, Jakob [2 ]
Karlsson, Christer [2 ]
机构
[1] Palo Alto Res Ctr, Palo Alto, CA 94304 USA
[2] Thin Film Elect AB, SE-58216 Linkoping, Sweden
来源
SCIENTIFIC REPORTS | 2012年 / 2卷
关键词
TRANSISTORS; POLYMER; ARRAY;
D O I
10.1038/srep00585
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Scalable circuits of organic logic and memory are realized using all-additive printing processes. A 3-bit organic complementary decoder is fabricated and used to read and write non-volatile, rewritable ferroelectric memory. The decoder-memory array is patterned by inkjet and gravure printing on flexible plastics. Simulation models for the organic transistors are developed, enabling circuit designs tolerant of the variations in printed devices. We explain the key design rules in fabrication of complex printed circuits and elucidate the performance requirements of materials and devices for reliable organic digital logic.
引用
收藏
页数:7
相关论文
共 50 条
  • [21] A Highly Non-Volatile Memory Scalable and Efficient File System
    Yang, Fan
    Kangy, Junbin
    Ma, Shuai
    Huai, Jinpeng
    [J]. Proceedings - 2018 IEEE 36th International Conference on Computer Design, ICCD 2018, 2019, : 431 - 438
  • [22] A Highly Non-Volatile Memory Scalable and Efficient File System
    Yang, Fan
    Kang, Junbin
    Ma, Shuai
    Huai, Jinpeng
    [J]. 2018 IEEE 36TH INTERNATIONAL CONFERENCE ON COMPUTER DESIGN (ICCD), 2018, : 431 - 438
  • [23] Temperature Effects on a Non-Volatile Memory Device with Ferroelectric Capacitor
    John, Caroline S.
    Macleod, Todd C.
    Evans, Joe
    Ho, Fat D.
    [J]. INTEGRATED FERROELECTRICS, 2014, 157 (01) : 23 - 30
  • [24] Non-volatile memory
    Casagrande, Giulio
    Chung, Shine
    [J]. Digest of Technical Papers - IEEE International Solid-State Circuits Conference, 2008, 51
  • [25] Non-volatile memory
    Sofer, Yair
    Oowaki, Yukihito
    [J]. Digest of Technical Papers - IEEE International Solid-State Circuits Conference, 2005, 48
  • [26] Printed Complementary Organic Thin Film Transistors based decoder for ferroelectric memory
    El Amraoui, A.
    Bocquet, M.
    Barros, F.
    Portal, J-M.
    Charbonneau, M.
    Jacob, S.
    Bablet, J.
    Benwadih, M.
    Fischer, V.
    Coppard, R.
    Gwoziecky, R.
    [J]. PROCEEDINGS OF THE 40TH EUROPEAN SOLID-STATE CIRCUIT CONFERENCE (ESSCIRC 2014), 2014, : 111 - +
  • [27] A microcontroller embedded with 4Kbit ferroelectric non-volatile memory
    Fukushima, T
    Kawahara, A
    Nanba, T
    Matsumoto, M
    Nishimoto, T
    Ikeda, N
    Judai, Y
    Sumi, T
    Arita, K
    Otsuki, T
    [J]. 1996 SYMPOSIUM ON VLSI CIRCUITS - DIGEST OF TECHNICAL PAPERS, 1996, : 46 - 47
  • [28] Non-volatile organic ferroelectric memory transistors fabricated using rigid polyimide islands on an elastomer substrate
    Jung, Soon-Won
    Koo, Jae Bon
    Park, Chan Woo
    Na, Bock Soon
    Park, Nae-Man
    Oh, Ji-Young
    Moon, Yu Gyeong
    Lee, Sang Seok
    Koo, Kyung-Wan
    [J]. JOURNAL OF MATERIALS CHEMISTRY C, 2016, 4 (20) : 4485 - 4490
  • [29] Control of Thin Ferroelectric Polymer Films for Non-volatile Memory Applications
    Park, Youn Jung
    Bae, In-sung
    Kang, Seok Ju
    Chang, Jiyoun
    Park, Cheolmin
    [J]. IEEE TRANSACTIONS ON DIELECTRICS AND ELECTRICAL INSULATION, 2010, 17 (04) : 1135 - 1163
  • [30] ZrO2 Ferroelectric FET for Non-volatile Memory Application
    Liu, Huan
    Wang, Chengxu
    Han, Genquan
    Li, Jing
    Peng, Yue
    Liu, Yan
    Wang, Xingsheng
    Zhong, Ni
    Duan, Chungang
    Wang, Xinran
    Xu, Nuo
    Liu, Tsu-Jae King
    Hao, Yue
    [J]. IEEE ELECTRON DEVICE LETTERS, 2019, 40 (09) : 1419 - 1422