Non-volatile organic ferroelectric memory transistors fabricated using rigid polyimide islands on an elastomer substrate

被引：25

作者：

Jung, Soon-Won ^{[1
]}

Koo, Jae Bon ^{[1
]}

Park, Chan Woo ^{[1
,2
]}

Na, Bock Soon ^{[1
]}

Park, Nae-Man ^{[1
]}

Oh, Ji-Young ^{[1
]}

Moon, Yu Gyeong ^{[1
,2
]}

Lee, Sang Seok ^{[1
]}

Koo, Kyung-Wan ^{[3
]}

机构：

[1] Elect & Telecommun Res Inst, ICT Mat & Components Res Lab, Daejeon 34129, South Korea

[2] Korea Univ Sci & Technol UST, Dept Adv Device Technol, Daejeon 34113, South Korea

[3] Hoseo Univ, Dept ICT Automot Engn, Asan 31499, South Korea

来源：

JOURNAL OF MATERIALS CHEMISTRY C | 2016年 / 4卷 / 20期

关键词：

THIN-FILM-TRANSISTORS; ELASTIC CONDUCTORS; ELECTRONICS; COPOLYMER; DEVICES; SILICON;

D O I：

10.1039/c6tc00083e

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The authors fabricated stretchable organic ferroelectric memory transistors (OFMTs) on a polydimethylsiloxane substrate using rigid polyimide island structures. The OFMTs exhibited a field-effect mobility of 4 x 10(-2) cm(2) V-1 s(-1) and a current on/off ratio of 10(5) with a notably low threshold voltage. Furthermore, our memory TFTs exhibit excellent mechanical stability, showing no noticeable change in electrical performance up to a large strain of 50%. These results indicated the feasibility of a promising device for stretchable electronic systems.

引用

页码：4485 / 4490

页数：6

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