ZrO2 Ferroelectric FET for Non-volatile Memory Application

被引：38

作者：

Liu, Huan ^{[1
]}

Wang, Chengxu ^{[2
]}

Han, Genquan ^{[1
]}

Li, Jing ^{[1
]}

Peng, Yue ^{[1
]}

Liu, Yan ^{[1
]}

Wang, Xingsheng ^{[2
]}

Zhong, Ni ^{[3
]}

Duan, Chungang ^{[3
]}

Wang, Xinran ^{[4
]}

Xu, Nuo ^{[5
]}

Liu, Tsu-Jae King ^{[5
]}

Hao, Yue ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond T, Xian 710071, Shaanxi, Peoples R China

[2] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Hubei, Peoples R China

[3] East China Normal Univ, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China

[4] Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210008, Jiangsu, Peoples R China

[5] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2019年 / 40卷 / 09期

基金：

中国国家自然科学基金;

关键词：

Anti-ferroelectric; ferroelectric; ferroelectric field-effect transistor (FeFET); ZrO2;

D O I：

10.1109/LED.2019.2930458

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate for the first time ZrO2 ferroelectric field-effect transistors (FeFETs) for embedded non-volatile memory applications. Multiple sweeps of polarization versus voltage measurement demonstrate that a metal/ZrO2/Ge capacitor is entirely free of wake-up effect and has significantly improved fatigue characteristics compared to a HfZrOx control device. Thanks to relatively small remnant polarization and a high-quality ZrO2/Ge interface, up to 10(7) cycles program/erase endurance, 10 ns program/erase speed, and >10-year data retention at 85 degrees C are achieved.

引用

页码：1419 / 1422

页数：4

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