New Observations on the Two-Stage Degradation of Hot Carrier Reliability in High-k/Metal-gate MOSFETs

被引：0

作者：

Yu, Zhuoqing ^{[1
]}

Guo, Shaofeng ^{[1
]}

Wang, Runsheng ^{[1
]}

Hao, Peng ^{[1
]}

Huang, Ru ^{[1
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

来源：

2017 IEEE 24TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA) | 2017年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, it is reported for the first time that, in nanoscale high-k/metal-gate MOSFETs, the hot carrier degradation (HCD) follows a two-stage law in some stress conditions. Both interface traps and oxide traps contribute to HCD causing its time-dependence varies with different stress modes. The results are helpful for the physical understanding of HCD in nanoscale devices.

引用

页数：4

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