Timing-Driven Row-Based Power Gating

被引:0
|
作者
Sathanur, A. [1 ]
Pullini, A. [1 ]
Benini, L.
Macii, A. [1 ]
Macii, E. [1 ]
Poncino, M. [1 ]
机构
[1] Politecn Torino, Turin, Italy
关键词
Leakage power; sleep transistor; power-gating; clustering; standard cell; row-based;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper we focus on leakage reduction through automatic insertion of sleep transistors using a row-based granularity. In particular, we tackle here the two main issues involved in this methodology: (i) Clustering and (ii) the interfacing of power-gated and non power-gated regions within the same block. The clustering algorithm automatically selects an optimal subset of rows that can be power-gated with a tightly controlled delay overhead. We then address the issue of interfacing different gated regions and propose a novel technique to address this issue with minimal area and power penalty. Our approach is compatible with state-of-the art logic and physical synthesis flows and it does not significantly impact design closure. We achieve leakage power reductions as high as 89% for a set of standard benchmarks, with minimum timing and area overhead.
引用
收藏
页码:104 / 109
页数:6
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