Suppression of Bipolar Degradation in 4H-SiC Power Devices by Carrier Lifetime Control

被引：4
|
作者：
Tsuchida, H. [1 ]
Murata, K. [1 ]
Tawara, T. [2 ,3 ]
Miyazato, M. [2 ,3 ]
Miyazawa, T. [1 ]
Maeda, K. [1 ]
机构：
[1] Cent Res Inst Elect Power Ind CRIEPI, Yokosuka, Kanagawa, Japan
[2] Natl Inst Adv Ind Sci & Technol, Ibaraki, Japan
[3] Fuji Elect Co Ltd, Nagano, Japan
来源：
2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2019年
关键词：
D O I：
10.1109/iedm19573.2019.8993530
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Bipolar degradation phenomenon, in which the on-state forward voltage increases with the expansion of stacking faults, is a significant issue for practical applications of 4H-SiC bipolar devices such as PiN diodes and IGBTs. This paper addresses methods realizing suppression of the degradation phenomenon by adopting carrier lifetime control techniques.
引用
收藏
页数：4
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