Suppression of Bipolar Degradation in 4H-SiC Power Devices by Carrier Lifetime Control

被引：4

作者：

Tsuchida, H. ^{[1
]}

Murata, K. ^{[1
]}

Tawara, T. ^{[2
,3
]}

Miyazato, M. ^{[2
,3
]}

Miyazawa, T. ^{[1
]}

Maeda, K. ^{[1
]}

机构：

[1] Cent Res Inst Elect Power Ind CRIEPI, Yokosuka, Kanagawa, Japan

[2] Natl Inst Adv Ind Sci & Technol, Ibaraki, Japan

[3] Fuji Elect Co Ltd, Nagano, Japan

来源：

2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2019年

关键词：

D O I：

10.1109/iedm19573.2019.8993530

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Bipolar degradation phenomenon, in which the on-state forward voltage increases with the expansion of stacking faults, is a significant issue for practical applications of 4H-SiC bipolar devices such as PiN diodes and IGBTs. This paper addresses methods realizing suppression of the degradation phenomenon by adopting carrier lifetime control techniques.

引用

页数：4

共 50 条

[21] OCVD Measurement of Ambipolar and Minority Carrier Lifetime in 4H-SiC Devices: Relevance of the Measurement Setup
Sozzi, Giovanna
Sapienza, Sergio
Nipoti, Roberta
Chiorboli, Giovanni
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (07) : 3254 - 3260
[22] Influence of base carrier lifetime on the characteristics of 4H-SiC BJTs
Yuan Lei
Song Qingwen
Tang Xiaoyan
Zhang Yimeng
Yang Shuai
Zhang Yimen
Guo Lixin
Xiao Li
Wang Liangyong
Zhang Yuming
SUPERLATTICES AND MICROSTRUCTURES, 2017, 102 : 127 - 133
[23] A novel design approach for the epitaxial layer for 4H-SiC and 6H-SiC power bipolar devices
Ben Salah, Tarek
Garrab, Hatem
Ghedira, Sami
Allard, Bruno
Risaletto, Damien
Raynaud, Christophe
Besbes, Kamel
Morel, Herve
SUPERLATTICES AND MICROSTRUCTURES, 2006, 40 (4-6) : 580 - 587
[24] Carrier lifetime measurement in n- 4H-SiC epilayers
Klein, P. B.
JOURNAL OF APPLIED PHYSICS, 2008, 103 (03)
[25] Influence of Growth Temperature on Carrier Lifetime in 4H-SiC Epilayers
Lilja, Louise
ul Hassan, Jawad
Booker, Ian
Bergman, Peder
Janzen, Erik
SILICON CARBIDE AND RELATED MATERIALS 2012, 2013, 740-742 : 637 - 640
[26] The influence of growth conditions on carrier lifetime in 4H-SiC epilayers
Lilja, Louise
Booker, Iand D.
ul Hassan, Jawad
Janzen, Erik
Bergman, J. Peder
JOURNAL OF CRYSTAL GROWTH, 2013, 381 : 43 - 50
[27] Electrothermal simulation of 4H-SiC power devices
Wright, NG
Morrison, DJ
Johnson, CM
O'Neill, AG
SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 917 - 920
[28] Electrothermal simulation of 4H-SiC power devices
Wright, N.G.
Morrison, D.J.
Johnson, C.M.
O'Neill, A.G.
Materials Science Forum, 1998, 264-268 (pt 2): : 917 - 920
[29] Effects of base doping and carrier lifetime on differential current gain and temperature coefficient of 4H-SiC power bipolar junction transistors
Niu, X.
Fardi, H.
INTERNATIONAL JOURNAL OF ELECTRONICS, 2012, 99 (04) : 531 - 542
[30] Lifetime Investigations of 4H-SiC PiN Power Diodes
Reshanov, S. A.
Bartsch, W.
Zippelius, B.
Pensl, G.
SILICON CARBIDE AND RELATED MATERIALS 2008, 2009, 615-617 : 699 - 702

← 1 2 3 4 5 →