Optical properties of CuInSe2 film semiconductor studied with potothermal deflection spectroscopy

被引：0
|
作者：
Dong, MY [1 ]
Chen, XF [1 ]
Deng, H [1 ]
机构：
[1] Zhejiang Univ, Dept Phys, Hangzhou 310027, Peoples R China
来源：
SOLAR OPTICAL MATERIALS XVI | 1999年 / 3789卷
关键词：
photothermal deflection spectroscopy (PDS); CuInSe2;
D O I：
10.1117/12.367560
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Photothermal deflection spectroscopy (PDS) is used to investigate the optical properties of CuInS2 thin film semiconductors, which are different in composition and technical preparation conditions. It is found in the experiment that absorption coefficient and direct band gap of the samples can be changed under the control of substrate temperature and proportion of [Cu]/[In], which agrees with the reported results by other methods.
引用
收藏
页码：131 / 137
页数：7
相关论文
共 50 条
  • [41] ELECTRICAL AND OPTICAL-PROPERTIES OF CUINSE2 AND CUINS2
    SUN, LY
    CLARK, AH
    KAZMERSKI, LL
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1977, 22 (03): : 347 - 347
  • [42] One-step electrodeposited CuInSe2 thin films studied by Raman spectroscopy
    Ramdani, O.
    Guillemoles, J. F.
    Lincot, D.
    Grand, P. P.
    Chassaing, E.
    Kerrec, O.
    Rzepka, E.
    THIN SOLID FILMS, 2007, 515 (15) : 5909 - 5912
  • [43] OPTICAL-PROPERTIES OF SILICATE-GLASSES DOPED WITH TERNARY CUINS2 AND CUINSE2 SEMICONDUCTOR COMPOUNDS
    BODNAR, IV
    MOLOCHKO, AP
    SOLOVEI, NP
    INORGANIC MATERIALS, 1993, 29 (09) : 1084 - 1086
  • [44] Dependence of Cu/In ratio on the optical properties of CuInSe2 epitaxial layers examined by piezoelectric photoacoustic spectroscopy
    Ikari, T
    Yoshino, K
    Shimizu, T
    Fukuyama, A
    Maeda, K
    Fons, PJ
    Yamada, A
    Niki, S
    TERNARY AND MULTINARY COMPOUNDS, 1998, 152 : 511 - 514
  • [45] Electrodeposited CuInSe2 thin film junctions
    Raffaelle, RP
    Mantovani, JG
    Bailey, SG
    Hepp, AF
    Gordon, EM
    Haraway, R
    CHEMICAL ASPECTS OF ELECTRONIC CERAMICS PROCESSING, 1998, 495 : 383 - 388
  • [46] Electrodeposited CuInSe2 thin film devices
    Raffaelle, RP
    Mantovani, JG
    Friedfeld, RB
    Bailey, SG
    Hubbard, SM
    CONFERENCE RECORD OF THE TWENTY SIXTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1997, 1997, : 559 - 562
  • [47] PHOTOCONDUCTIVE IMAGING USING CUINSE2 FILM
    TANAKA, K
    KOSUGI, M
    ANDO, F
    USHIKI, T
    USUI, H
    SATO, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 : 113 - 115
  • [48] Characterization of electrodeposited CuInSe2 (CIS) film
    Kang, Soon Hyung
    Kim, Yu-Kyung
    Choi, Don-Soo
    Sung, Yung-Eun
    ELECTROCHIMICA ACTA, 2006, 51 (21) : 4433 - 4438
  • [49] Dielectric spectroscopy of CuInSe2 single crystals
    Mustafaeva, S. N.
    Asadov, S. M.
    Guseinov, D. T.
    Kasimoglu, I
    SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS, 2016, 19 (02) : 201 - 204
  • [50] Optical spectroscopy of chalcopyrite compounds CuInS2, CuInSe2 and their solid solutions
    Mudryi, AV
    Victorov, IA
    Gremenok, VF
    Patuk, AI
    Shakin, IA
    Yakushev, M
    THIN SOLID FILMS, 2003, 431 : 197 - 199
12345