Optoelectronic active element based on PbS/ZnSe heterostructure

被引：1
|
作者：
Khlyap, G [1 ]
机构：
[1] State Pedag Univ, UA-82106 Drogobych, Ukraine
来源：
EDMO 2001: INTERNATIONAL SYMPOSIUM ON ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS | 2001年
关键词：
D O I：
10.1109/EDMO.2001.974285
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Photoelectric characteristics of isotype n-n-heterostructure PbS/ZnSe grown by low-temperature (T-s=540 K) MBE technique of lead sulfide thin films on monocrystalline ZnSe wafers are studied. Detailed examination of observed photoresponse and photoluminescence in wavelength range 0.4divided by4.8 flm under temperatures 77divided by300 K has demonstrated that the space charge region localized at the interface plays main part in the photo-properties of the structure.
引用
收藏
页码：67 / 69
页数：3
相关论文
共 50 条
  • [31] Optoelectronic Transistor Based on InSe/MoS2 Heterostructure for Multimodal Nociceptor
    Wang, Haobin
    Yang, Yifei
    Yu, Niannian
    Chen, Ziqi
    Yuan, Junhui
    Wang, Jiafu
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2024, 18 (11):
  • [32] Semiconductor laser based on a CdS/ZnSe heterostructure with longitudinal optical pumping by a laser diode
    Butaev, M. R.
    Kozlovsky, V., I
    Skasyrsky, Ya K.
    QUANTUM ELECTRONICS, 2022, 52 (04) : 359 - 361
  • [33] Tunable and Energetically Robust PbS Nanoplatelets for Optoelectronic Applications
    Li, Huashan
    Zhitomirsky, David
    Grossman, Jeffrey C.
    CHEMISTRY OF MATERIALS, 2016, 28 (06) : 1888 - 1896
  • [34] Optically pumped semiconductor laser based on a type-II CdS/ZnSe heterostructure
    Butaev, M. R.
    Kozlovsky, V., I
    Skasyrsky, Ya K.
    QUANTUM ELECTRONICS, 2020, 50 (07) : 683 - 687
  • [35] Effect of ZnSe/GaAs interface treatment in ZnSe quality control for optoelectronic device applications
    Park, Kwangwook
    Beaton, Daniel
    Steirer, Kenneth X.
    Alberi, Kirstin
    APPLIED SURFACE SCIENCE, 2017, 405 : 247 - 254
  • [36] ⟨310⟩ misfit dislocations in ZnSe/GaAs(001) heterostructure
    Lavagne, S
    Levade, C
    Vanderschaeve, G
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2002, 14 (48) : 13291 - 13298
  • [37] An interfacial defect-controlled ZnO/PbS QDs/ZnS heterostructure based broadband photodetector
    Li, Haili
    Jiao, Shujie
    Li, Hongtao
    Gao, Shiyong
    Wang, Jinzhong
    Wang, Dongbo
    Yu, Qingjiang
    Zhang, Yong
    Li, Lin
    Zhou, Haitao
    RSC ADVANCES, 2016, 6 (78): : 74575 - 74581
  • [38] Ag Incorporated ZnO Nanorods Array/ZnSe Heterostructure
    Shahi, Neda
    Rahmati, Ali
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2019, 8 (10) : Q200 - Q206
  • [39] Optoelectronic properties of ZnSe/ZnMgSSe multiple quantum wells
    Chang, CW
    Yang, HC
    Chen, CH
    Chang, HJ
    Chen, YF
    JOURNAL OF APPLIED PHYSICS, 2001, 89 (07) : 3725 - 3729
  • [40] Compatibility and optoelectronic of ZnSe nano crystalline thin film
    Khan, Taj Muhammad
    BiBi, Tayyaba
    CHINESE PHYSICS B, 2012, 21 (09)
12345