Optoelectronic active element based on PbS/ZnSe heterostructure

被引：1
|
作者：
Khlyap, G [1 ]
机构：
[1] State Pedag Univ, UA-82106 Drogobych, Ukraine
来源：
EDMO 2001: INTERNATIONAL SYMPOSIUM ON ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS | 2001年
关键词：
D O I：
10.1109/EDMO.2001.974285
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Photoelectric characteristics of isotype n-n-heterostructure PbS/ZnSe grown by low-temperature (T-s=540 K) MBE technique of lead sulfide thin films on monocrystalline ZnSe wafers are studied. Detailed examination of observed photoresponse and photoluminescence in wavelength range 0.4divided by4.8 flm under temperatures 77divided by300 K has demonstrated that the space charge region localized at the interface plays main part in the photo-properties of the structure.
引用
收藏
页码：67 / 69
页数：3
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