Semiconductor laser based on a CdS/ZnSe heterostructure with longitudinal optical pumping by a laser diode

被引：4
|
作者：
Butaev, M. R. [1 ,2 ]
Kozlovsky, V., I [1 ,2 ]
Skasyrsky, Ya K. [1 ]
机构：
[1] Russian Acad Sci, Lebedev Phys Inst, Leninsky Prosp 53, Moscow 119991, Russia
[2] Natl Res Nucl Univ MEPhI, Kashirskoe Sh 31, Moscow 115409, Russia
来源：
QUANTUM ELECTRONICS | 2022年 / 52卷 / 04期
基金：
俄罗斯基础研究基金会;
关键词：
metalorganic vapour phase epitaxy; CdS/ZnSe heterostructure; quantum wells; optical pumping; POWER;
D O I：
10.1070/QEL18016
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An optically pumped semiconductor laser based on a CdS/ZnSe heterostructure containing 10 coupled quantum wells is studied. The structure is grown by metalorganic vapour phase epitaxy on a GaAs substrate. A microcavity with interference dielectric mirrors is fabricated based on this structure. At room temperature under longitudinal pumping by au InGaN/GaN pulsed laser diode with a wavelength of 438 nm, the peak power of the microcavity reaches 100 mW at a wavelength of 508 nm and a pulse duration of 65 ns.
引用
收藏
页码：359 / 361
页数：3
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