Semiconductor laser with longitudinal electron-beam pumping and based on a quantum-well ZnCdSe/ZnSe structure grown on a ZnSe substrate by molecular beam epitaxy

The method of molecular beam epitaxy on a ZnSe substrate was used to grow a ZnCdSe/ZnSe structure with 115 quantum wells. This structure was made up into a cavity which included part of the substrate. Lasing was excited by longitudinal pumping with a scanning electron beam of E-e = 40-70 keV energy. At T = 80 K for E-e = 65 keV the threshold current density was 60 A cm-2 and the output power was 0.15 W at the 465 nm wavelength, At T = 300 K the lasing (lambda = 474 nm) occurred in the ZnSe substrate.