MBE-grown HgCdTe heterojunction structures for IRFPAs

被引：5

作者：

Wu, OK ^{[1
]}

Rajavel, RD ^{[1
]}

DeLyon, TJ ^{[1
]}

Jensen, JE ^{[1
]}

Cockrum, CA ^{[1
]}

Johnson, SM ^{[1
]}

Venzor, GM ^{[1
]}

Chapman, GR ^{[1
]}

Wilson, JA ^{[1
]}

Patten, EA ^{[1
]}

Radford, WA ^{[1
]}

机构：

[1] HUGHES RES LABS,MALIBU,CA 90265

来源：

PHOTODETECTORS: MATERIALS AND DEVICES | 1996年 / 2685卷

关键词：

MBE; HgCdTe; IRFPAs; MWIR; LWIR; HgCdTe on Si; 2-color detectors;

D O I：

10.1117/12.237708

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：16 / 27

页数：12

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