MBE-grown HgCdTe heterojunction structures for IRFPAs

被引：5
|
作者：
Wu, OK [1 ]
Rajavel, RD [1 ]
DeLyon, TJ [1 ]
Jensen, JE [1 ]
Cockrum, CA [1 ]
Johnson, SM [1 ]
Venzor, GM [1 ]
Chapman, GR [1 ]
Wilson, JA [1 ]
Patten, EA [1 ]
Radford, WA [1 ]
机构：
[1] HUGHES RES LABS,MALIBU,CA 90265
来源：
PHOTODETECTORS: MATERIALS AND DEVICES | 1996年 / 2685卷
关键词：
MBE; HgCdTe; IRFPAs; MWIR; LWIR; HgCdTe on Si; 2-color detectors;
D O I：
10.1117/12.237708
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
引用
收藏
页码：16 / 27
页数：12
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