High speed silicon electro-optic modulator with p-i-n comb diode

被引：4
|
作者：
Al-Saadi, Aws [1 ]
Eichler, Hans J. [1 ]
Meister, Stefan [1 ]
机构：
[1] Tech Univ Berlin, Inst Opt & Atomare Phys, Berlin, Germany
来源：
OPTICAL AND QUANTUM ELECTRONICS | 2012年 / 44卷 / 3-5期
关键词：
Electro-optic modulator; SOI waveguide; Micro-cavity; Photonic crystal; Silicon photonics; CMOS; ON-INSULATOR; WAVE-GUIDES; COMPACT; DEVICES;
D O I：
10.1007/s11082-012-9552-5
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An electro-optic modulator based on a 1-dimensional photonic crystal in a Fabry-Perot structure in a silicon on insulator waveguide with a comb like diode structure is proposed. By placing the doped regions of the p-i-n diode into the minima of the standing wave inside the resonator, the modulation bandwidth is increased compared to a conventional stripe diode. The highly doped regions inside the waveguide induce only low additional losses.
引用
收藏
页码：125 / 131
页数：7
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